November 2014

DocID024613 Rev 2

1/12

This is information on a product in full production.

www.st.com

STR2P3LLH6

P-

channel 30 V, 0.048 Ω typ., 2 A STripFET™ H6 Power

MOSFET in a SOT-23 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

STR2P3LLH6

30 V

0.056 Ω @ 10 V

2 A



Very low on-resistance



Very low gate charge



High avalanche ruggedness



Low gate drive power loss

Applications



Switching applications

Description

This device is a P-channel Power MOSFET

develo

ped using the STripFET™ H6 technology,

with a new trench gate structure. The resulting

packages.

Table 1: Device summary

Order codes

Marking

Package

Packaging

STR2P3LLH6

2K3L

SOT-23

Tape and reel

For the P-channel MOSFET the actual

polarity of the voltages and the current must

be reversed.