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M95M01-R 数据表(PDF) 34 Page - STMicroelectronics

部件名 M95M01-R
功能描述  1-Mbit serial SPI bus EEPROM
PDF  51 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M95M01-R 数据表(HTML) 34 Page - STMicroelectronics

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DC and AC parameters
M95M01-DF M95M01-R
34/51
DocID13264 Rev 14
Table 11. Cycling performance by groups of four bytes
Symbol
Parameter(1)
1. Cycling performance for products identified by process letter K (previous products were specified with 1
million cycles at 25 °C).
Test conditions
Min.
Max.
Unit
Ncycle
Write cycle endurance(2)
2. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1,
4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and
qualification.
TA 25 °C,
VCC(min) < VCC < VCC(max)
-
4,000,000
Write cycle(3)
3. A Write cycle is executed when either a Page Write, a Byte Write, a WRSR, a WRID or an LID instruction is
decoded. When using the Byte Write, the Page Write or the WRID instruction, refer also to Section 6.6.1:
Cycling with Error Correction Code (ECC).
TA = 85 °C,
VCC(min) < VCC < VCC(max)
-
1,200,000
Table 12. Memory cell data retention
Parameter
Test conditions
Min.
Unit
Data retention(1) (2)
1. The data retention behavior is checked in production, while the 200-year limit is defined from
characterization and qualification results.
2. For products identified by process letter K (previous products were specified with a data retention of 40
years at 55°C).
TA = 55 °C
200
Year
Table 13. Capacitance
Symbol
Parameter
Test conditions(1)
1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz.
Min.
Max.
Unit
COUT
Output capacitance (Q)
VOUT = 0 V
-
8
pF
CIN
Input capacitance (D)
VIN = 0 V
-
8
pF
Input capacitance (other pins)
VIN = 0 V
-
6
pF



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