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145 数据表(PDF) 8 Page - STMicroelectronics |
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145 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 12 page ![]() Prepared by JM Bugnard Page 6/9 Process Change/ Transfer Qualification report n° QASO8N91 3. QUALIFICATION RESULTS 3.1 Process qualification results. Bond Pull Test Device Wire size Min Max Average Stdev Cpk comments TL431CD LM358CD 1.0mil 1.0 mil 8.3g 8.5g 14.4g 12.7g 10.9 10.5 1.34 1.26 1.72 1.71 Minimum specification: 4g Bond shear test Device Wire size Min Max Average Stdev Cpk comments TL431CD LM358CD 1.0mil 1.0 mil 45.0g 43.2g 65.4g 60.8g 57.2 53.1 5.72 5.04 1.94 1.92 Minimum specification: 32g 3.2 Bench Test qualification results 3.2.1 X-ray analysis Wire sweeping conform No glue void 3.2.2 External visual NiPdAu plating: No exposed copper Surface finish: Uniform stains free & uniform print Cracks: Not visible at x10 Resin holes: not visible at x10 Other: No other visual defect 3.2.3 Scanning acoustic microscopy No delamination. 3.2.4 Microsection Resin holes: no void Glue thickness: conform (min: 11.3µm, max 11.8µm) Glue voids: no void Die tilt: conform (0.5µm) Die scribing: conform NiPdAu plating thickness: conform Package alignment : conform 3.2.5 Decapped devices Loop height: conform Ball size variation: conform Bond shape: conform: Bond centering: conform Weld shape: conform Weld centering: conform Die scribing: conform Die chipping: conform |
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