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145 数据表(PDF) 9 Page - STMicroelectronics |
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145 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 12 page ![]() Prepared by JM Bugnard Page 7/9 Process Change/ Transfer Qualification report n° QASO8N91 3.2.6 External dimension measurement Conform 3.2.7 Solderability Conform (both after 24h steam aging and 24 hours dry air) on 80 units 3.3 FINAL TEST QUALIFICATION TL431CD LM358D Test Yield 99.75% 99.91 3.4 Reliability qualification results Test Conditions Duration Steps Lot 1 TL431CD Lot 2 LM358D Lot 3 TL082CD TMC -65/+150°C 1000 cy 100cy 1000cy 0/78 0/78 0/78 0/78 0/78 0/78 TMSK -65/+150°C 500 shks 100 shks 500shks 0/78 0/78 0/78 0/78 0/78 0/78 PPT 121°C, 2atm. 480 hours 168h 240h 480h 0/78 0/78 0/78 0/78 0/78 0/78 0/78 0/78 Envir. Sequ. TMC + PPT 100cy + 48h 100cy 48h 0/78 0/78 0/78 0/78 0/78 0/78 HTB 125°C 1000 h 168 1000h 0/78 0/78 0/78 0/78 0/60 0/60 THB 85°C, 85%HR 1000 h 168 1000h 0/78 0/78 0/78 0/78 0/60 0/60 RSM 245°C 0/20 + 0/15 0/15 0/20 RSM 260°C 0/20 0/20 Test marked in blue performed in ST Muar 3.4.1 Drift analysis 168h 1000 HTB (mean Vref drift) TL431CD 2.57mV 1.88mV THB (mean Vref drift) TL431CD 0.54mV 1.17mV HTB (mean Vio drift) LM358D 0.047mV 0.108 THB (mean Vio drift) LM358D -0.01mV 0.05 HTB (mean Vio drift) TL082CD 0.32mV 0.29mV THB (mean Vio drift) TL082CD 0.20mV 0.15mV |
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