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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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ST92F120 数据表(PDF) 39 Page - STMicroelectronics |
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ST92F120 数据表(HTML) 39 Page - STMicroelectronics |
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39 / 324 page  39/324 ST92F120 - SINGLE VOLTAGE FLASH & EEPROM 3 SINGLE VOLTAGE FLASH & EEPROM 3.1 INTRODUCTION The Flash circuitry contains one array divided in two main parts that can each be read independ- ently. The first part contains the main Flash array for code storage, a reserved array (TestFlash) for system routines and a 128-byte area available as one time programmable memory (OTP). The sec- ond part contains the two dedicated Flash sectors used for EEPROM Hardware Emulation. The write operations of the two parts are managed by an embedded Program/Erase Controller, that uses a dedicated ROM. Through a dedicated RAM buffer the Flash and the EEPROM can be written in blocks of 16 bytes. Figure 21. Flash Memory Structure (Example for 128K Flash device) 230000h 000000h 010000h 01C000h 01E000h 228000h 22C000h Sector F0 64 Kbytes Sector F1 48 Kbytes Sector F2 8 Kbytes Sector F3 8 Kbytes Sector E0 4 Kbytes Sector E1 4 Kbytes TestFlash 8 Kbytes Program / Erase Controller RAM buffer 16 bytes Register Interface Address Data 231F80h User OTP and Protection registers 8 sense + 8 program load 8 sense + 8 program load 9 |
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