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AM29SL400CB100REF 数据表(PDF) 3 Page - SPANSION

部件名 AM29SL400CB100REF
功能描述  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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AM29SL400CB100REF 数据表(HTML) 3 Page - SPANSION

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ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information is in-
tended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product
without notice.
Publication# Am29SL400C Rev: A
Amendment+5
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29SL400C
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only
Super Low Voltage Flash Memory
Distinctive Characteristics
Single power supply operation
— 1.65 to 2.2 V for read, program, and erase
operations
— Ideal for battery-powered applications
Manufactured on 0.32 µm process
technology
High performance
— Access times as fast as 100 ns
Ultra low power consumption (typical
values at 5 MHz)
— 1 µA Automatic Sleep Mode current
— 1 µA standby mode current
— 5 mA read current
— 20 mA program/erase current
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations
within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
Minimum 1,000,000 erase cycle
guarantee per sector
20-year data retention at 125°C
Package option
—48-ball FBGA
—48-pin TSOP
Compatibility with JEDEC standards
— Pinout and software compatible with
single-power supply Flash
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends an erase operation to read data
from, or program data to, a sector that is not
being erased, then resumes the erase
operation
Hardware reset pin (RESET#)
— Hardware method to reset the device to
reading array data



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