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GD5F2GQ4RF9JS 数据表(PDF) 36 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD5F2GQ4RF9JS 数据表(HTML) 36 Page - GigaDevice Semiconductor (Beijing) Inc. |
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36 / 57 page ![]() SPI(x1/x2/x4) NAND Flash 2G 36 12 ERASE OPERATIONS 12.1 Block Erase (D8H) Figure12-1. Block Erase Sequence Diagram Command 0 1 2 3 4 5 6 7 D8H CS# SCLK SI SO High-Z 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24-bit address CS# get feature 0 1 2 3 4 5 6 7 0FH CS# SLK SI SO High-Z 8 9 10 11 12 13 14 15 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 MSB Status register address Status register data out MSB SCLK SI SO tCS 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 7 6 5 4 3 2 1 0 Status register data out 7 6 MSB The BLOCK ERASE (D8H) command is used to erase at the block level. The blocks are organized as 64 pages per block, 2176 bytes per page (2048 + 128 bytes). Each block is136 Kbytes. The BLOCK ERASE command (D8H) operates on one block at a time. The command sequence for the BLOCK ERASE operation is as follows: • 06H (WRITE ENBALE command) • D8H (BLOCK ERASE command) • 0FH (GET FEATURES command to read the status register) Prior to performing the BLOCK ERASE operation, a WRITE ENABLE (06H) command must be issued. As with any command that changes the memory contents, the WRITEENABLE command must be executed in order to set the WEL bit. If the WRITE ENABLE command is not issued, then the rest of the erase sequence is ignored. A WRITE ENABLE command must be followed by a BLOCK ERASE (D8H) command. This command requires a 24-bit address. After the row address is registered, the control logic automatically controls timing and erase-verify operations. The device is busy for tERS time during the BLOCK ERASE operation. The GET FEATURES (0FH) command can be used to monitor the status of the operation. When a block erase operation is in progress, user can issue normal read from cache commands (03H/0BH/3BH/6BH/BBH/EBH) to read the data in the cache. |
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