ADN2525

Rev. 0 | Page 3 of 16

SPECIFICATIONS

Typical values are specified at 25°C, IMOD = 40 mA.

Table 1.

Parameter

Min

Typ

Max

Unit

Test Conditions/Comments

BIAS CURRENT (IBIAS)

Bias Current Range

10

100

mA

Bias Current while ALS Asserted

100

µA

ALS = high

Compliance Voltage1

0.6

VCC – 1.2

V

IBIAS = 100 mA

0.6

VCC – 0.8

V

IBIAS = 10 mA

MODULATION CURRENT (IMODP, IMODN)

Modulation Current Range

10

80

mA diff

Modulation Current while ALS Asserted

0.5

mA diff

ALS = high

Rise Time (20% to 80%)2, 3

24

32.5

ps

Fall Time (20% to 80%)

2

,

3

24

32.5

ps

Random Jitter

2

,

3

0.4

0.9

ps rms

7.2

12

ps p-p

−10

dB

−14

dB

Compliance Voltage

1

VCC − 1.1

VCC + 1.1

V

DATA INPUTS (DATAP, DATAN)

Input Data Rate

10.7

Gbps

NRZ

Differential Input Swing

0.4

1.6

V p-p diff

Differential ac-coupled

−16.8

dB

Input Termination Resistance

85

100

115

Ω

Differential

BIAS CONTROL INPUT (BSET)

BSET Voltage to IBIAS Gain

75

100

120

mA/V

BSET Input Resistance

800

1000

1200

Ω

MODULATION CONTROL INPUT (MSET)

MSET Voltage to IMOD Gain

70

88

110

mA/V

See Figure 29

MSET Input Resistance

800

1000

1200

Ω

BIAS MONITOR (IBMON)

IBMON to IBIAS Ratio

10

µA/mA

Accuracy of IBIAS to IBMON Ratio

−5.0

+5.0

%

10 mA

≤ IBIAS < 20 mA, R

IBMON

= 1 kΩ

−4.0

+4.0

%

20 mA

≤ IBIAS < 40 mA, R

IBMON

= 1 kΩ

−2.5

+2.5

%

40 mA

≤ IBIAS < 70 mA, R

IBMON

= 1 kΩ

−2

+2

%

70 mA

≤ IBIAS < 100 mA, R

IBMON

= 1 kΩ

AUTOMATIC LASER SHUTDOWN (ALS)

2.4

V

0.8

V

−20

+20

µA

0

200

µA

ALS Assert Time

10

µs

Rising edge of ALS to fall of IBIAS and IMOD below

10% of nominal; see Figure 2

ALS Negate Time

10

µs

Falling edge of ALS to rise of IBIAS and IMOD above

90% of nominal; see Figure 2

POWER SUPPLY

3.07

3.3

3.53

V

ICC5

39

45

mA

157

176

mA

section for total supply current calculation.

Power Consumption