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MTC20136 数据表(PDF) 22 Page - STMicroelectronics |
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MTC20136 数据表(HTML) 22 Page - STMicroelectronics |
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22 / 25 page ![]() MTC20136 22/25 Input/Output CMOS Generic Characteristics The values presented in the following table apply for all CMOS inputs and/ or outputs unless specified oth- erwise. Table 12. CMOS IO buffers generic characteristics The reference current is dependent on the exact buffer chosen and is a part of the buffer name. The avail- able values are 2, 4 and 8 mA. Input/Output TTL Generic Characteristics The values presented in the following table apply for all TTL inputs and/or outputs unless specified other- wise. Table 13. TTL IO buffers generic characteristics The reference current is dependent on the exact buffer chosen and is a part of the buffer name. The avail- able values are currently 2, 4 and 8 mA. OPERATING CONDITIONS Table 14. Operating Conditions DC Electrical Characteristics All voltages are referenced to VSS, unless otherwise specified, positive current is towards the device Symbol Parameter Test Conditions Min Typ Max Unit VIL Low level input voltage 0.2* VDD V VIH High level input voltage 0.8*VDD V VHY Schmitt trigger hysteresis slow edge < 1 V/ms, only for SCHMITx 0.8 V VOL Low level output voltage IOUT = XmA[ 0.4 V VOH High level output voltage IOUT = -XmA[ 0.85*VDD V DC Electrical Characteristics All voltages are referenced to VSS, unless otherwise specified, positive current is towards the device Symbol Parameter Test Conditions Min Typ Max Unit VIL Low level input voltage 0.8 V VIH High level input voltage 2.0 V VILHY Low level threshold, falling slow edge < 1 V/ms 0.9 1.35 V VIHHY High level threshold, rising slow edge < 1 V/ms 1.3 1.9 V VHY Schmitt trigger hysteresis slow edge < 1 V/ms 0.4 0.7 V VOL Low level output voltage IOUT = XmA[ 0.4 V VOH High level output voltage IOUT = -XmA[ 2.4 V Maximum ratings Symbol Parameter Test Conditions Min Typ Max Unit VDD Supply voltage 3.0 3.3 3.6 V Tamb Ambient temperature1m/s airflow -40 +85 °C P Power dissipation 300 400 mW |
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