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AM29BDS643D 数据表(PDF) 34 Page - Advanced Micro Devices |
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AM29BDS643D 数据表(HTML) 34 Page - Advanced Micro Devices |
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34 / 46 page  34 Am29BDS643D PRELI M INARY AC CHARACTERISTICS Erase/Program Operations Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. 3. Does not include the preprogramming time. Parameter Description 9A, 9B Unit JEDEC Standard tAVAV tWC Write Cycle Time (Note 1) Min 80 ns tAVWL tAS Address Setup Time Min 5 ns tWLAX tAH Address Hold Time Min 7 ns tAVDP AVD# Low Time Min 12 ns tDVWH tDS Data Setup Time Min 45 ns tWHDX tDH Data Hold Time Min 0 ns tGHWL tGHWL Read Recovery Time Before Write Typ 0 ns tELWL tCS CE# Setup Time Typ 0 ns tWHEH tCH CE# Hold Time Typ 0 ns tWLWH tWP/tWRL Write Pulse Width Typ 50 ns tWHWL tWPH Write Pulse Width High Typ 30 ns tSR/W Latency Between Read and Write Operations Min 0 ns tWHWH1 tWHWH1 Programming Operation (Note 2) Typ 11.5 µs tWHWH1 tWHWH1 Accelerated Programming Operation (Note 2) Typ 4 µs tWHWH2 tWHWH2 Sector Erase Operation (Notes 2, 3) Typ 1.5 sec tVPP VPP Rise and Fall Time Min 500 ns tVPS VPP Setup Time (During Accelerated Programming) Min 1 µs tVCS VCC Setup Time Min 50 µs |
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