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AM29BDS643D 数据表(PDF) 12 Page - Advanced Micro Devices

部件名 AM29BDS643D
功能描述  64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  46 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29BDS643D 数据表(HTML) 12 Page - Advanced Micro Devices

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Am29BDS643D
PRELI M INARY
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 4 for com-
mand definitions).
The device offers three types of data protection at the
sector level:
s The sector lock/unlock command sequence dis-
ables or re-enables both program and erase opera-
tions in any sector.
s When WP# is at VIL, the two outermost sectors are
locked.
s When VPP is at VIL, all sectors are locked.
The following hardware data protection measures pre-
vent accidental erasure or programming, which might
otherwise be caused by spurious system level signals
during VCC power-up and power-down transitions, or
from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to reading array data. Subse-
quent writes are ignored until VCC is greater than
VLKO. The system must provide the proper signals to
the control inputs to prevent unintentional writes when
VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.



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