AT21CS01 datasheet(7/47 Pages) MICROCHIP

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Parameter

Symbol

Minimum

Typical(2)

Maximum

Units

Test Conditions

SI/O Hysteresis(3)(4)(5)

VHYS

0.128

—

1.17

Output Low Level

VOL

—

0.4

IOL = 4 mA

Bus Capacitance

CBUS

—

1000

Note:

Parameters are applicable over the operating range in AT21CS01/11 DC and AC Operating Range,

unless otherwise noted.

Typical values characterized at TA = +25°C unless otherwise noted.

This parameter is characterized but is not 100% tested in production.

VIH, VIL, and VHYS are a function of the internal supply voltage, which is a function of VPUP, RPUP,

CBUS, and timing used. Use of a lower VPUP, higher RPUP, higher CBUS, and shorter tRCV creates

lower VIH, VIL and VHYS values.

Once VIH is crossed on a rising edge of SI/O, the voltage on SI/O must drop at least by VHYS to be

detected as a logic ‘0’.

1.4

AT21CS11 DC Characteristics(1)

Parameter

Symbol

Minimum

Typical(2)

Maximum

Units

Test Conditions

Pull-up Voltage

VPUP

2.7

—

4.5

High-Speed

mode

Pull-up Resistance

RPUP

0.2

—

1.8

kΩ

VPUP = 2.7V

0.4

—

5.4

kΩ

VPUP = 4.5V

Active Current, Read

IA1

—

0.08

0.3

VPUP = 4.5V;

SI/O = VPUP

Active Current, Write

IA2

—

0.20

0.5

VPUP = 4.5V

Standby Current

ISB

—

0.6

1.5

µA

VPUP = 2.7V(3);

SI/O = VPUP

—

0.7

3.0

µA

VPUP = 4.5V;

SI/O = VPUP

Input Low Level(3)(4)

VIL

–0.6

—

0.5

Input High Level(3)(4)

VIH

VPUP x 0.7

—

VPUP + 0.5

SI/O Hysteresis(3)(4)(5)

VHYS

0.128

—

1.4

Output Low Level

VOL

—

0.4

IOL = 4 mA

Bus Capacitance

CBUS

—

1000

Note:

Parameters are applicable over the operating range in AT21CS01/11 DC and AC Operating Range,

unless otherwise noted.

Typical values characterized at TA = +25°C unless otherwise noted.

This parameter is characterized but is not 100% tested in production.

AT21CS01/AT21CS11

Datasheet

DS20005857A-page 7

AT21CS01 数据表(PDF) 7 Page - Microchip Technology

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