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AT21CS01 数据表(PDF) 10 Page - Microchip Technology |
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AT21CS01 数据表(HTML) 10 Page - Microchip Technology |
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10 / 47 page ![]() 1.5.3 EEPROM Cell Performance Characteristics Operation Min. Max. Units Test Condition Write Cycle Time (tWR) — 5 ms VPUP (min.) < VPUP < VPUP (max.), TA = 25°C, Byte or Page Write mode Write Endurance(1) 1,000,000 — Write Cycles VPUP (min.) < VPUP < VPUP (max.), TA = 25°C, Byte or Page Write mode Data Retention(2) 100 — Years VPUP (min.) < VPUP < VPUP (max.), TA = 55°C Note: 1. Write endurance performance is determined through characterization and the qualification process. 2. The data retention capability is determined through qualification and checked on each device in production. AT21CS01/AT21CS11 © 2017 Microchip Technology Inc. Datasheet DS20005857A-page 10 |
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