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FS32K148UFT0VLHT 数据表(PDF) 13 Page - NXP Semiconductors |
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FS32K148UFT0VLHT 数据表(HTML) 13 Page - NXP Semiconductors |
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13 / 100 page  6. Open drain outputs must be pulled to VDD. 7. When input pad voltage levels are close to VDD or VSS, practically no current injection is possible. Table 4. Voltage and current operating requirements for S32K14xW series 1 Symbol Description Min. Max. Unit Notes VDD2 Supply voltage 3.13 5.5 V 3 VDD_OFF Voltage allowed to be developed on VDD pin when it is not powered from any external power supply source. 0 0.1 V VDDA Analog supply voltage 3.13 5.5 V 3 VDD – VDDA VDD-to-VDDA differential voltage – 0.1 0.1 V 3 VREFH ADC reference voltage high 3.13 VDDA + 0.1 V 4 VREFL ADC reference voltage low -0.1 0.1 V VODPU Open drain pullup voltage level VDD VDD V 5 IINJPAD_DC_OP6 Continuous DC input current (positive / negative) that can be injected into an I/O pin -3 +3 mA IINJSUM_DC_OP Continuous total DC input current that can be injected across all I/O pins such that there's no degradation in accuracy of analog modules: ADC and ACMP (See section Analog Modules) — 30 mA 1. Typical conditions assumes VDD = VDDA = VREFH = 5 V, temperature = 25 °C and typical silicon process unless otherwise stated. 2. As VDD varies between the minimum value and the absolute maximum value the analog characteristics of the I/O and the ADC will both change. See section I/O parameters and ADC electrical specifications respectively for details. 3. VDD and VDDA must be shorted to a common source on PCB. The differential voltage between VDD and VDDA is for RF-AC only. Appropriate decoupling capacitors to be used to filter noise on the supplies. See application note AN5032 for reference supply design for SAR ADC. 4. VREFH should always be equal to or less than VDDA + 0.1 V and VDD + 0.1 V 5. Open drain outputs must be pulled to VDD. 6. When input pad voltage levels are close to VDD or VSS, practically no current injection is possible. 4.3 Thermal operating characteristics Table 5. Thermal operating characteristics for S32K1xx series Symbol Parameter Value Unit Min. Typ. Max. TA C-Grade Part Ambient temperature under bias −40 — 851 ℃ TJ C-Grade Part Junction temperature under bias −40 — 1051 ℃ TA V-Grade Part Ambient temperature under bias −40 — 1051 ℃ TJ V-Grade Part Junction temperature under bias −40 — 1251 ℃ TA M-Grade Part Ambient temperature under bias −40 — 1252 ℃ TJ M-Grade Part Junction temperature under bias −40 — 1352 ℃ 1. Values mentioned are measured at ≤ 112 MHz in HSRUN mode. 2. Values mentioned are measured at ≤ 80 MHz in RUN mode. General S32K1xx Data Sheet, Rev. 13, 04/2020 NXP Semiconductors 13 |
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