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AS29F010 数据表(PDF) 4 Page - Alliance Semiconductor Corporation

部件名 AS29F010
功能描述  5V 128K x 8 CMOS FLASH EEPROM
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS29F010 数据表(HTML) 4 Page - Alliance Semiconductor Corporation

  AS29F010 Datasheet HTML 1Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 2Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 3Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 4Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 5Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 6Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 7Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 8Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 9Page - Alliance Semiconductor Corporation Next Button
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Individual write commands are used together in eight program and erase algorithms to guarantee the AS29F010 operating margins for the
life of the part. Refer to the AS29F010 Programming Specification for details on the algorithms for program and erase operation .
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Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is notimplied. Exposure to absolute max-
imum rating conditions for extended periods may affect reliability.
Mode
DIN[3]
Write[3] data
AIN[4]
Write[4]
address
DIN[4]
data
Read address
Read data
Read delay
Maximum time out
Reset
00h
x
x
0000h
Status
100 ns
250 µs
Status
01h
x
x
0000h
Status
100 ns
250 µs
ID Read
code
02h
0000h
0001h
x
x
0000h
0001h
Mfr. code
52h
Device code
04h
100 ns
100 ns
250 µs
Verify-0
04h
AIN
xAIN
DOUT
25 µs
250 µs
Verify-1
08h
AIN
xAIN
DOUT
25 µs
250 µs
Converge
10h
AIN
00h
AIN
Status
100 ns
250 µs
Program
40h
AIN
DIN
AIN
Status
100 ns
250 µs
Erase
80h
AIN
FFh
AIN
Status
100 ns
1000 µs
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
VSS
00
0V
Input voltage
VIH
2.0
-
VCC + 1.0
V
VIL
–0.5
-
0.8
V
Parameter
Symbol
Min
Max
Unit
Input voltage (Input or DQ pin)
VIN
–1.0
VCC + 1.0
V
Input voltage (A9 pin)
VIN
–1.0
+13.0
V
Output voltage
VOUT
–1.0
VCC + 1.0
V
Power supply voltage
VCC
+4.5
+5.5
V
Operating temperature
TOPR
–55
+125
°C
Storage temperature (plastic)
TSTG
–65
+125
°C
Short circuit output current
IOUT
-100
mA
Latch-up current
IIN
-±100
mA



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