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AS29F010 数据表(PDF) 4 Page - Alliance Semiconductor Corporation |
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AS29F010 数据表(HTML) 4 Page - Alliance Semiconductor Corporation |
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4 / 10 page ![]() $65<)343 $65<)343 $65<)343 $65<)343 ® 7777 $//,$1&(#6(0,&21'8&725 $//,$1&(#6(0,&21'8&725 $//,$1&(#6(0,&21'8&725 $//,$1&(#6(0,&21'8&725 ','#4407333:0$1#72:233 ','#4407333:0$1#72:233 ','#4407333:0$1#72:233 ','#4407333:0$1#72:233 &RPPDQG#FRGH#WDEOH &RPPDQG#DOJRULWKPV Individual write commands are used together in eight program and erase algorithms to guarantee the AS29F010 operating margins for the life of the part. Refer to the AS29F010 Programming Specification for details on the algorithms for program and erase operation . 5HFRPPHQGHG#RSHUDWLQJ#FRQGLWLRQV +7D# #3ƒ&#WR#.:3ƒ&, $EVROXWH#PD[LPXP#UDWLQJV Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is notimplied. Exposure to absolute max- imum rating conditions for extended periods may affect reliability. Mode DIN[3] Write[3] data AIN[4] Write[4] address DIN[4] data Read address Read data Read delay Maximum time out Reset 00h x x 0000h Status 100 ns 250 µs Status 01h x x 0000h Status 100 ns 250 µs ID Read code 02h 0000h 0001h x x 0000h 0001h Mfr. code 52h Device code 04h 100 ns 100 ns 250 µs Verify-0 04h AIN xAIN DOUT 25 µs 250 µs Verify-1 08h AIN xAIN DOUT 25 µs 250 µs Converge 10h AIN 00h AIN Status 100 ns 250 µs Program 40h AIN DIN AIN Status 100 ns 250 µs Erase 80h AIN FFh AIN Status 100 ns 1000 µs Parameter Symbol Min Typ Max Unit Supply voltage VCC 4.5 5.0 5.5 V VSS 00 0V Input voltage VIH 2.0 - VCC + 1.0 V VIL –0.5 - 0.8 V Parameter Symbol Min Max Unit Input voltage (Input or DQ pin) VIN –1.0 VCC + 1.0 V Input voltage (A9 pin) VIN –1.0 +13.0 V Output voltage VOUT –1.0 VCC + 1.0 V Power supply voltage VCC +4.5 +5.5 V Operating temperature TOPR –55 +125 °C Storage temperature (plastic) TSTG –65 +125 °C Short circuit output current IOUT -100 mA Latch-up current IIN -±100 mA |
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