AS29F010 datasheet(1/10 Pages) ALSC

部件名	AS29F010

功能描述	5V 128K x 8 CMOS FLASH EEPROM

PDF	10 Pages

Scroll/Zoom	100%

制造商	ALSC [Alliance Semiconductor Corporation]

网页	https://www.alliancememory.com

标志

1 / 10 page

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AS29F010-120

AS29F010-150

Unit

Maximum access time

tAA

120

150

ns

Chip enable access time

tCE

120

150

ns

Output enable access time

tOE

50

ns

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1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

VCC

WE

NC*

A14

A13

A8

A9

A11

OE

A10

CE

DQ7

DQ6

DQ5

DQ4

DQ3

NC

A16

A15

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

VSS

VCC

WE

NC

A14

A13

A8

A9

A11

OE

A10

CE

DQ7

DQ6

DQ5

NC

A16

A15

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

VSS

DQ4

DQ3

1

2

3

4

5

6

7

8

9

10

11

12

13

14

32

31

30

29

28

27

26

25

24

23

22

21

20

19

15

16

18

17

A7

5

A6

6

A5

7

A4

8

A3

9

A2

10

A1

11

29

A14

28

A13

27

A8

26

A9

25

A11

24

OE

23

A10

A0

12

DQ0

13

22

CE

21

DQ7

32-pin

PDIP

PLCC

TSOP

AS29F010

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• Organization: 128K × 8 bits

• Sector Erase architecture

- Four 32K × 8 sectors

• Single 5.0±0.5V power supply for read/write operations

• High speed 120/150 ns address access time

• Low power consumption:

- 30 mA maximum read current

- 50 mA maximum program current

- 1.5 mA maximum standby current

- 1 mA maximum standby current (low power)

• 10,000 write/erase cycle endurance

• JEDEC standard write cycle commands

- protects data from accidental changes

• Program/erase cycle end signals:

-Data polling

- DQ6 toggle

• Low VCC write lock-out below 3.2V

• JEDEC standard packages and pinouts:

-32-pin DIP

- 32-pin PLCC

- 32-pin TSOP

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WE

CE

OE

A0~A16

Low VCC detector

Program/erase

pulse timer

State

control

Command

register

Erase voltage

switch

Input/output

buffers

Program voltage

switch

Data

latch

Chip enable

Output enable

Logic

X-Decoder

Y-Gating

Y-Decoder

1,048,576 bit

Cell matrix

DQ0~DQ7

VCC

VSS

类似零件编号 - AS29F010

制造商	部件名	数据表	功能描述
Austin Semiconductor	AS29F010	530Kb / 26P	128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
Micross Components	AS29F010	871Kb / 26P	Flexible sector architecture
Austin Semiconductor	AS29F010CW-120/883C	530Kb / 26P	128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
	AS29F010CW-120/IT	530Kb / 26P	128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
	AS29F010CW-120/Q	530Kb / 26P	128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY

More results

类似说明 - AS29F010

制造商	部件名	数据表	功能描述
Winbond	W29C011A	153Kb / 19P	128K X 8 CMOS FLASH MEMORY
Winbond	W29EE011	183Kb / 20P	128K X 8 CMOS FLASH MEMORY
Intel Corporation	A28F010	300Kb / 23P	1024K (128K x 8) CMOS FLASH MEMORY
Winbond	W29EE012	242Kb / 19P	128K X 8 CMOS FLASH MEMORY
Winbond	W39L010	780Kb / 27P	128K X 8 CMOS FLASH MEMORY
Alliance Semiconductor ...	AS7C1024B	111Kb / 9P	5V 128K X 8 CMOS SRAM
	AS29F040	341Kb / 18P	5V 512K x 8 CMOS FLASH EEPROM
	AS29F200	375Kb / 20P	5V 256K x 8/128K x 8 CMOS FLASH EEPROM
	AS7C1024C	113Kb / 9P	5V 128K X 8 CMOS SRAM
Force Technologies Ltd	FT28C010-XXXXX-X	2Mb / 30P	128K x 8 Bit 5V EEPROM