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AS29F010 数据表(PDF) 6 Page - Alliance Semiconductor Corporation

部件名 AS29F010
功能描述  5V 128K x 8 CMOS FLASH EEPROM
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS29F010 数据表(HTML) 6 Page - Alliance Semiconductor Corporation

Back Button AS29F010 Datasheet HTML 2Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 3Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 4Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 5Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 6Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 7Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 8Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 9Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 10Page - Alliance Semiconductor Corporation  
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JEDEC
symbol
Std symbol
Parameter
-120
-150
Unit
Min
Max
Min
Max
tAVAV
tRC
Read cycle time
120
-
150
-
ns
tAVQV
tACC
Address to output delay
-
120
-
150
ns
tELQV
tCE
Chip enable to output
-
120
-
150
ns
tGLQV
tOE
Output enable to output
-
50
-
50
ns
tEHQZ
tDF
Chip enable to output High Z
-
30
-
30
ns
tGHQZ
tDF
Output enable to output High Z
-
30
-
30
ns
tAXQX
tOH
Output hold time from addresses, first
occurrence of CE or OE
0-
0-
ns
JEDEC
symbol
Std symbol
Parameter
-120
-150
Unit
Min
Max
Min
Max
tAVAV
tWC
Write cycle time
120
-
150
-
ns
tAVWL
tAS
Address setup time
0
-
0
-
ns
tWLAX
tAH
Address hold time
50
-
50
-
ns
tDVWH
tDS
Data setup time
50
-
50
-
ns
tWHDX
tDH
Data hold time
0
-
0
-
ns
tOES
Output enable setup time
0
-
0
-
ns
tOEH
Output enable hold time: Read
0
-
0
-
ns
Output enable hold time:
Toggle and DATA polling
10
-
10
-
ns
tGHWL
tGHWL
Read recover time before write
0
-
0
-
ns
tELWL
tCS
CE setup time
0
-
0
-
ns
tWHEH
tCH
CE hold time
0
-
0
-
ns
tWLWH
tWP
Write pulse width
80
-
80
-
ns
tWHWL
tWPH
Write pulse width high
20
-
20
-
ns
tWHWH1
tWHWH1
Programming pulse time
250
-
250
-
µs
tWHWH2
tWHWH2
Erase pulse time
1000
-
1000
-
µs
tVCS
VCC setup time
2
-
2
-
µs



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