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AS29F010 数据表(PDF) 8 Page - Alliance Semiconductor Corporation

部件名 AS29F010
功能描述  5V 128K x 8 CMOS FLASH EEPROM
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS29F010 数据表(HTML) 8 Page - Alliance Semiconductor Corporation

Back Button AS29F010 Datasheet HTML 2Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 3Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 4Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 5Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 6Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 7Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 8Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 9Page - Alliance Semiconductor Corporation AS29F010 Datasheet HTML 10Page - Alliance Semiconductor Corporation  
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Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at a time.
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Parameter
Min
Max
Unit
Input voltage with respect to VSS on pin A9
-1.0
+13.5
V
Input voltage with respect to VSS on all DQ pins
-1.0
VCC+1.0
V
Current
-100
+100
mA
Symbol
Parameter
Test setup
Typical
Max
Unit
CIN
Input capacitance
VIN = 0
6
7.5
pF
COUT
Output capacitance
VOUT = 0
8.5
12
pF
CIN2
Control pin capacitance
VIN = 0
7.5
9
µF
Symbol
Parameter
Test setup
Typical
Max
Unit
CIN
Input capacitance
VIN = 0
46pF
COUT
Output capacitance
VOUT = 0
8
12
pF
CIN2
Control pin capacitance
VIN = 0
8
12
µF
Parameter
Limits
Unit
Min
Typical
Max
Sector erase and Verify-1 time (excludes 00h programming prior to erase)
-
6.0
8.2
sec
Sector programming time
-
-
8.2
sec
Chip programming time
-
48
80
sec
Erase program cycles
-
10,000
-
cycles
Byte program time
-
200
250
µs
Byte verify-0 time
-
200
250
µs
6.2K
Ω
100 pF*
2.7K
Ω
Device under test
GND
+5V
*including scope
and jig capacitance
GND
GND
1N3064
or equivalent
1N3064
or equivalent



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