MWCT1014AFVLLPR datasheet(17/65 Pages) NXP

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4.8 ESD handling ratings

Symbol

Description

Min.

Max.

Unit

Notes

VHBM

Electrostatic discharge voltage, human body model

− 4000

4000

VCDM

Electrostatic discharge voltage, charged-device model

All pins except the corner pins

− 500

500

Corner pins only

− 750

750

ILAT

Latch-up current at ambient temperature of 125 °C

− 100

100

1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body

Model (HBM).

2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for

Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.

3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.

4.9 EMC radiated emissions operating behaviors

EMC measurements to IC-level IEC standards are available from NXP on request.

I/O parameters

5.1 AC electrical characteristics

Unless otherwise specified, propagation delays are measured from the 50% to the 50%

point, and rise and fall times are measured at the 20% and 80% points, as shown in the

following figure.

Figure 6. Input signal measurement reference

I/O parameters

MWCT101XS Data Sheet, Rev. 3, 12/2019

NXP Semiconductors

MWCT1014AFVLLPR 数据表(PDF) 17 Page - NXP Semiconductors

MWCT1014AFVLLPR 数据表(HTML) 17 Page - NXP Semiconductors

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