MWCT1014AFVLLPR datasheet(31/65 Pages) NXP

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5. FlexMemory write endurance specified for 16-bit and/or 32-bit writes to FlexRAM and is supported across product

temperature specification in Normal Mode (not supported in HSRUN mode). Greater write endurance may be achieved

with larger ratios of EEPROM backup to FlexRAM.

6. For usage of any EEE driver other than the FlexMemory feature, the endurance spec will fall back to the specified

endurance value of the D-Flash specification (1K).

7. FlexMemory calculator tool is available at NXP web site for help in estimation of the maximum write endurance achievable

at specific EEPROM/FlexRAM ratios. The “In Spec” portions of the online calculator refer to the NVM reliability

specifications section of data sheet. This calculator is only applies to the FlexMemory feature.

6.3.2 QuadSPI AC specifications

The following table describes the QuadSPI electrical characteristics.

• Measurements are with maximum output load of 25 pF, input transition of 1 ns and

pad configured with fastest slew settings (DSE = 1'b1).

• I/O operating voltage ranges from 2.97 V to 3.6 V

• While doing the mode transition (RUN -> HSRUN or HSRUN -> RUN ), the

interface should be OFF.

• Add 50 ohm series termination on board in QuadSPI SCK for Flash A to avoid loop

back reflection when using in Internal DQS (PAD Loopback) mode.

• QuadSPI trace length should be 3 inches.

• For non-Quad mode of operation if external device doesn’t have pull-up feature,

external pull-up needs to be added at board level for non-used pads.

• With external pull-up, performance of the interface may degrade based on load

associated with external pull-up.

Memory and memory interfaces

MWCT101XS Data Sheet, Rev. 3, 12/2019

NXP Semiconductors

MWCT1014AFVLLPR 数据表(PDF) 31 Page - NXP Semiconductors