| 数据搜索系统,热门电子元器件搜索 |
|
MWCT1014AFVLLPR 数据表(PDF) 19 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
MWCT1014AFVLLPR 数据表(HTML) 19 Page - NXP Semiconductors |
|
19 / 65 page ![]() Table 9. DC electrical specifications at 3.3 V Range (continued) Symbol Parameter Value Unit Notes Min. Typ. Max. IohGPIO-HD_DSE_0 IolGPIO IolGPIO-HD_DSE_0 I/O current sink capability measured when pad Vol = 0.8 V 3 — — mA IohGPIO-HD_DSE_1 I/O current source capability measured when pad Voh = (VDD − 0.8 V) 14 — — mA 4 IolGPIO-HD_DSE_1 I/O current sink capability measured when pad Vol = 0.8 V 12 — — mA 4 IohGPIO-FAST_DSE_0 I/O current sink capability measured when pad Voh=VDD-0.8 V 9.5 — — mA 5 IolGPIO-FAST_DSE_0 I/O current sink capability measured when pad Vol = 0.8 V 10 — — mA 5 IohGPIO-FAST_DSE_1 I/O current sink capability measured when pad Voh=VDD-0.8 V 16 — — mA 5 IolGPIO-FAST_DSE_1 I/O current sink capability measured when pad Vol = 0.8 V 15.5 — — mA 5 IOHT Output high current total for all ports — — 100 mA IIN Input leakage current (per pin) for full temperature range at VDD = 3.3 V 6 All pins other than high drive port pins 0.005 0.5 μA High drive port pins 0.010 0.5 μA RPU Internal pullup resistors 20 60 kΩ 7 RPD Internal pulldown resistors 20 60 kΩ 8 1. MWCT1016S will operate from 2.7 V when executing from internal FIRC. When the PLL is engaged MWCT1016S is guaranteed to operate from 2.97 V. All other MWCT101xS family devices operate from 2.7 V in all modes. 2. For reset pads, same Vih levels are applicable 3. For reset pads, same Vil levels are applicable 4. The value given is measured at high drive strength mode. For value at low drive strength mode see the Ioh_Standard value given above. 5. For refernce only. Run simulations with the IBIS model and custom board for accurate results. 6. Several I/O have both high drive and normal drive capability selected by the associated Portx_PCRn[DSE] control bit. All other GPIOs are normal drive only. For details refer to MWCT101xS_IO_Signal_Description_Input_Multiplexing.xlsx attached with the Reference Manual. 7. Measured at input V = VSS 8. Measured at input V = VDD 5.4 DC electrical specifications at 5.0 V Range Table 10. DC electrical specifications at 5.0 V Range Symbol Parameter Value Unit Notes Min. Typ. Max. VDD I/O Supply Voltage 4 — 5.5 V Vih Input Buffer High Voltage 0.65 x VDD — VDD + 0.3 V 1 Table continues on the next page... I/O parameters MWCT101XS Data Sheet, Rev. 3, 12/2019 NXP Semiconductors 19 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |