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STM32WLE4JC 数据表(PDF) 88 Page - STMicroelectronics |
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STM32WLE4JC 数据表(HTML) 88 Page - STMicroelectronics |
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88 / 145 page ![]() Table 48. Current consumption in Standby mode Symbol Parameter Conditions Typ Max(1) Unit - VDD (V) 0 °C 25 °C 55 °C 85 °C 105 °C 0 °C 25 °C 85 °C 105 °C IDD (Standby) Supply current in Standby mode RTC disabled Backup registers retained No retention 1.8 0.009 0.027 0.245 1.00 2.40 - - - - µA 2.4 0.022 0.051 0.340 1.35 2.85 - - - - 3.0 0.046 0.071 0.470 1.75 3.40 - - - - 3.6 0.075 0.125 0.650 2.30 4.05 - - - - SRAM2 retained 1.8 0.130 0.205 0.820 2.90 5.55 0.200 0.550 8.20 24.0 2.4 0.140 0.225 0.915 3.25 6.05 - - - - 3.0 0.165 0.255 1.05 3.70 6.60 0.280 0.710 9.40 27.0 3.6 0.190 0.300 1.20 4.25 7.25 0.330 0.770 10.0 28.0 IDD (Standby with RTC) Supply current in Standby mode (backup registers and SRAM2 retained) RTC enabled RTC clocked by LSI (PREDIV = 1) 1.8 0.215 0.295 0.895 3.10 5.30 - - - - 2.4 0.230 0.325 0.990 3.45 5.95 - - - - 3.0 0.260 0.360 1.15 3.95 6.85 - - - - 3.6 0.305 0.425 1.30 4.55 7.85 - - - - RTC clocked by LSE quartz(2) in low drive mode 1.8 0.270 0.350 0.975 3.15 5.80 - - - - 2.4 0.295 0.390 1.10 3.50 6.25 - - - - 3.0 0.345 0.445 1.25 4.00 6.85 - - - - 3.6 0.415 0.535 1.45 4.60 7.55 - - - - 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. Table 49. Current consumption during wakeup from Standby mode Symbol Conditions Typ at 25 °C Unit VDD = 1.8 V VDD = 2.4 V VDD = 3.0 V VDD = 3.6 V IDD (wakeup from Standby) Wakeup clock: MSI 4 MHz 23.5 81.3 111 114 nAs Wakeup clock: MSI 8 MHz 15.2 15.7 17.3 19.6 |
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