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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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STM32WLE4JC 数据表(PDF) 90 Page - STMicroelectronics |
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STM32WLE4JC 数据表(HTML) 90 Page - STMicroelectronics |
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90 / 145 page  Table 51. Current consumption in VBAT mode Symbol Parameter Conditions Typ Max Unit - VBAT (V) 0 °C 25 °C 55 °C 85 °C 105 °C 105 °C IDD(VBAT) Backup domain supply current RTC disabled 1.8 1.00 3.00 19.0 95.0 180 1.00 nA 2.4 1.00 3.00 22.0 110 200 1.00 3.0 1.00 5.00 31.0 150 270 1.00 3.6 3.00 11.0 50.0 220 380 3.00 RTC enabled and clocked by LSE quartz(1) 1.8 140 150 180 275 390 140 2.4 155 170 200 310 435 155 3.0 185 200 235 375 545 185 3.6 230 245 295 485 710 230 1. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. Table 52. Current under Reset condition Symbol Conditions Typ Unit VDD (V) 25 °C IDD(RST) 1.8 V 600 µA 2.4 V 650 3.0 V 700 3.6 V 780 |
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