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STM32WLE4JC 数据表(PDF) 99 Page - STMicroelectronics |
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STM32WLE4JC 数据表(HTML) 99 Page - STMicroelectronics |
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99 / 145 page ![]() DS13105 Rev 8 99/145 STM32WLE5/E4xx Electrical characteristics 133 Figure 18. HSI16 frequency versus temperature TRIM HSI16 user trimming step Trimming code is not a multiple of 48 0.2 0.3 0.4 % Trimming code is a multiple of 48 –4 –6 –8 DuCy(HSI16) (2) Duty cycle - 45 - 55 ∆Temp(HSI16) HSI16 oscillator frequency drift Tj = 0 to 85 °C –1 - 1 Tj = -40 to 125 °C –2 - 1.5 ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD = 1.8 V to 3.6 V –0.1 - 0.05 tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time - - 3 5 IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Guaranteed by characterization results. 2. Guaranteed by design. Table 61. HSI16 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit MSv66006V3 15.6 15.7 15.8 15.9 16 16.1 16.2 16.3 16.4 -40 -20 0 20 40 60 80 100 120 MHz °C Mean Min Max +2 % +1.5 % +1 % -1 % -1.5 % -2 % |
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