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STM32WLE4JC 数据表(PDF) 108 Page - STMicroelectronics

部件名 STM32WLE4JC
功能描述  Multiprotocol LPWAN 32-bit Arm® Cortex®-M4 MCUs, LoRa®, (G)FSK, (G)MSK, BPSK, up to 256KB Flash, 64KB SRAM
PDF  145 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32WLE4JC 数据表(HTML) 108 Page - STMicroelectronics

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Electrical characteristics
STM32WLE5/E4xx
108/145
DS13105 Rev 8
5.3.15
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3V-capable I/O pins), must be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
case abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating-input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out-of-range parameter: ADC error above a certain limit
(higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent
pins (out of the -5 µA/0 µA range) or other functional failure (for example reset occurrence
or oscillator frequency deviation).
The characterization results are given in the table below.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
Table 71. I/O current injection susceptibility(1)
1. Guaranteed by characterization results.
Symbol
Description
Functional susceptibility
Unit
Negative
injection
Positive
injection
IINJ
Injected current on all pins except PB0
–5
N/A(2)
2. Injection not possible.
mA
Injected current on PB0 pin
–5
0



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