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ADPA1105ACGZN-R7 数据表(PDF) 14 Page - Analog Devices

部件名 ADPA1105ACGZN-R7
功能描述  46 dBm (40 W), 0.9 GHz to 1.6 GHz, GaN Power Amplifier
PDF  16 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPA1105ACGZN-R7 数据表(HTML) 14 Page - Analog Devices

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ADPA1105
Data Sheet
Rev. 0 | Page 14 of 16
APPLICATIONS INFORMATION
BASIC CONNECTIONS
The basic connections for operating the ADPA1105 are shown
in Figure 50. Apply a power supply voltage between 20 V and 50 V
to the VDD1 and VDD2 pins. Decouple each pin with the capacitor
values shown in Figure 50. Place 3.9 Ω resistors in series with the
two 1000 pF power supply decoupling capacitors connected to Pin
28 and Pin 31 (VDD2 and VDD1). Tie together the two gate voltage
pins, VGG1 and VGG2, and drive the pins as shown in Figure 50.
Pin 2, Pin 3, Pin 7, Pin 12, Pin 13, Pin 18, Pin 22, Pin 23, Pin 26,
Pin 27, Pin 29, and Pin 30 are designated as no connect (NC) pins.
Although these pins are not internally connected, the pins were
all connected to ground during the characterization of the device
and provide some additional thermal relief.
The decoupling capacitors on the VDD1, VDD2, VGG1, and VGG2
lines represent the configuration that was used to characterize
and qualify the ADPA1105. The user can reduce the number of
capacitors, but the result varies from system to system. General
guidance is to first remove or combine the largest capacitors
that are farthest from the device.
External bias is provided to the on-chip RF detection circuit via
two 715 Ω resistors that are pulled up to 5 V, which results in a
current draw of approximately 12 mA. An operation amplifier
configured as a differential amplifier can be used to subtract
VDET from VREF to yield a temperature compensated voltage
that is proportional to the RF output power.
Apply a voltage between 0 V and −4 V to the VGG1 and VGG2
lines to set the bias level and drain current. Because the
ADPA1105 cannot support continuous operation, the device
must be operated in pulsed mode by pulsing either the gate
voltage or the drain voltage.
In gate pulsed mode, VDD is held at a fixed level (nominally
+50 V) while the gate voltage is pulsed between −4 V (off) and
approximately −2.3 V (on). The exact on level can be adjusted
to achieve the desired quiescent drain current.
In drain pulsed mode, the VDD voltage is pulsed on and off
while the gate voltage is held at a fixed negative level between
0 V and −4 V. Because high currents and voltages are being
switched on and off, a metal-oxide semiconductor field effect
transistor (MOSFET) and a MOSFET switch driver are required
in the circuit. Large capacitors are also required, which act as
local reservoirs of charge and help provide the drain current
required by the ADPA1105 while maintaining a steady drain
voltage during the on time of the pulse.
The ADPA1105-EVALZ evaluation board package includes a
plugin pulser board that contains the required circuitry to
implement drain pulsed mode. See the ADPA1105-EVALZ for
more information.
17
1
3
4
2
5
6
RFIN
VGG
(0V TO –4V)
VGG1
VGG2
VDD1
VDD2
7
8
18
19
20
21
RFOUT
VDD
50V/2A
715Ω
VREF
VDET
715Ω
5V
C13
0.39nF
GROUND
PAD
C3
1000pF
3.9Ω
C14
1000pF
3.9Ω
C12
0.39nF
22
23
24
C4
1µF
C6
0.01µF
C10
100pF
C5
1µF
C7
0.01µF
C11
100pF
Figure 50. Basic Connection



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