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ADPA1105ACGZN-R7 数据表(PDF) 14 Page - Analog Devices |
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ADPA1105ACGZN-R7 数据表(HTML) 14 Page - Analog Devices |
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14 / 16 page ![]() ADPA1105 Data Sheet Rev. 0 | Page 14 of 16 APPLICATIONS INFORMATION BASIC CONNECTIONS The basic connections for operating the ADPA1105 are shown in Figure 50. Apply a power supply voltage between 20 V and 50 V to the VDD1 and VDD2 pins. Decouple each pin with the capacitor values shown in Figure 50. Place 3.9 Ω resistors in series with the two 1000 pF power supply decoupling capacitors connected to Pin 28 and Pin 31 (VDD2 and VDD1). Tie together the two gate voltage pins, VGG1 and VGG2, and drive the pins as shown in Figure 50. Pin 2, Pin 3, Pin 7, Pin 12, Pin 13, Pin 18, Pin 22, Pin 23, Pin 26, Pin 27, Pin 29, and Pin 30 are designated as no connect (NC) pins. Although these pins are not internally connected, the pins were all connected to ground during the characterization of the device and provide some additional thermal relief. The decoupling capacitors on the VDD1, VDD2, VGG1, and VGG2 lines represent the configuration that was used to characterize and qualify the ADPA1105. The user can reduce the number of capacitors, but the result varies from system to system. General guidance is to first remove or combine the largest capacitors that are farthest from the device. External bias is provided to the on-chip RF detection circuit via two 715 Ω resistors that are pulled up to 5 V, which results in a current draw of approximately 12 mA. An operation amplifier configured as a differential amplifier can be used to subtract VDET from VREF to yield a temperature compensated voltage that is proportional to the RF output power. Apply a voltage between 0 V and −4 V to the VGG1 and VGG2 lines to set the bias level and drain current. Because the ADPA1105 cannot support continuous operation, the device must be operated in pulsed mode by pulsing either the gate voltage or the drain voltage. In gate pulsed mode, VDD is held at a fixed level (nominally +50 V) while the gate voltage is pulsed between −4 V (off) and approximately −2.3 V (on). The exact on level can be adjusted to achieve the desired quiescent drain current. In drain pulsed mode, the VDD voltage is pulsed on and off while the gate voltage is held at a fixed negative level between 0 V and −4 V. Because high currents and voltages are being switched on and off, a metal-oxide semiconductor field effect transistor (MOSFET) and a MOSFET switch driver are required in the circuit. Large capacitors are also required, which act as local reservoirs of charge and help provide the drain current required by the ADPA1105 while maintaining a steady drain voltage during the on time of the pulse. The ADPA1105-EVALZ evaluation board package includes a plugin pulser board that contains the required circuitry to implement drain pulsed mode. See the ADPA1105-EVALZ for more information. 17 1 3 4 2 5 6 RFIN VGG (0V TO –4V) VGG1 VGG2 VDD1 VDD2 7 8 18 19 20 21 RFOUT VDD 50V/2A 715Ω VREF VDET 715Ω 5V C13 0.39nF GROUND PAD C3 1000pF 3.9Ω C14 1000pF 3.9Ω C12 0.39nF 22 23 24 C4 1µF C6 0.01µF C10 100pF C5 1µF C7 0.01µF C11 100pF Figure 50. Basic Connection |
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