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LTM4656 数据表(PDF) 11 Page - Analog Devices |
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LTM4656 数据表(HTML) 11 Page - Analog Devices |
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11 / 28 page ![]() LTM4656/LTM4656-1 11 Rev. 0 For more information www.analog.com APPLICATIONS INFORMATION When the TMR pin reaches 1.275V, the FLT pin is latched low as an early warning of impending shutdown, then it continues unabated until the TMR reaches 1.375V, pro- ducing an early warning period given by: tFLT = 0.01µF • 1.275V – 0.5V ITMR tWARN = 0.01µF • 1.375V – 1.275V ITMR ITMR taken from Figure 1. Because ITMR is a function of VIN–SENSE1, the exact time in current limit depends upon the input waveform and the time required for the output current to come into regula- tion. Testing of the overall solution should be verified, and compared to the MOSFET SOA curves. COOLDOWN PHASE Cooldown behavior is initiated by overcurrent. During the cooldown phase, the timer continues to charge from 1.375V to 4.3V with 2µA, and then discharges back down to 0.5V with 2µA, for a total equivalent voltage swing of 6.725V. The cooldown time is given by: tCOOL = 0.01µF • 6.725V 2µA = 33.6ms This long cool time assures that during retry the MOSFET does not overheat. The LTM4656 will auto-retry at the end of the cooldown phase.Retryisautomaticallyinitiated.Thecooldownphase may be interrupted in the LTM4656 by pulling SHDN low for at least 10ms. The FLT pin goes high in shutdown and is cleared high when power is first applied to VIN. Brief overcurrent conditions interrupt the operation of the timer. If the TMR pin has not yet reached 1.275V when fault drops out of current limit, the timer capacitor is discharged back to 0.5V with a 2µA current sink. If the TMR voltage crosses 1.275V, then FLT is set low. If the overcurrent abates before reaching 1.375V, the timer capacitor discharges with 2µA back to 0.5V, whereupon FLT resets high. If several short overcurrent events occur in rapid succession, the timer capacitor will integrate the charging and discharging currents. Figure 20 shows an overcurrent fault wave from and a retry cycle. MIN MOSFET SOA CURVE Figure 3 shows the MIN MOSFET SOA curve. This curve can be compared to the period of time the MIN Power MOSFET stays on during a fault condition with an over- current flowing through MIN, and the worse-case voltage across the MIN MOSFET. Figure 3. MIN Internal MOSFET SOA Curves DC 10s 1s 100ms 10ms 1ms TA = 25°C SINGLE PULSE TJ = MAX RATED THIS AREA IS LIMITED BY RDS(ON) RθJA = 125°C/W VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 200 0.01 0.1 1 10 100 400 4656 F03 |
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