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ADPA7008CHIP 数据表(PDF) 16 Page - Analog Devices

部件名 ADPA7008CHIP
功能描述  20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier
PDF  26 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPA7008CHIP 数据表(HTML) 16 Page - Analog Devices

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ADPA7008CHIP
Data Sheet
Rev. 0 | Page 16 of 26
THEORY OF OPERATION
The architecture of the ADPA7008CHIP, a medium power
amplifier, is shown in Figure 55. The ADPA7008CHIP uses
two cascaded, four-stage amplifiers operating in quadrature
between six 90° hybrids.
The input signal is divided evenly into two, and then each
signal is divided into two again. Each of these new paths are
amplified through four independent gain stages. The amplified
signals are then combined at the output. This balanced amplifier
approach forms an amplifier with a combined gain of 18 dB and
a PSAT value of 31 dBm.
A portion of the RF output signal is directionally coupled to a
diode for detection of the RF output power. When the diode is
dc biased, the diode rectifies the RF power and makes the RF
power available for measurement as a dc voltage at VDET. To
allow temperature compensation of VDET, an identical and
symmetrically located circuit, minus the coupled RF power, is
available via VREF. Taking the difference of VREF − VDET
provides a temperature compensated signal that is proportional
to the RF output (see Figure 55).
The 90° hybrids ensure that the input and output return losses
are greater than 14 dB. See the application circuits shown in
Figure 56 and Figure 57 for further details on biasing the
various blocks.
VDD2 VDD4
RFOUT
VREF
VGG1 VGG2
VDD1 VDD3
RFIN
DIRECTIONAL
COUPLER
VDET
Figure 55. ADPA7008CHIP Architecture



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