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ADPA7008CHIP 数据表(PDF) 25 Page - Analog Devices

部件名 ADPA7008CHIP
功能描述  20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier
PDF  26 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPA7008CHIP 数据表(HTML) 25 Page - Analog Devices

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Data Sheet
ADPA7008CHIP
Rev. 0 | Page 25 of 26
MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS
Attach the die directly to the ground plane with conductive
epoxy (see the Handling Precautions section, the Mounting
section, and the Wire Bonding section).
Place the microstrip substrates as close to the die as possible to
minimize ribbon bond length. Typical die to substrate spacing
is 0.076 mm to 0.152 mm (3 mil to 6 mil).
MMIC
3mil GOLD
RIBBON
3mil GA
RFIN
50Ω
TRANSMISSION LINE
Figure 66. High Frequency Input Wideband Matching
MMIC
3mil GOLD
RIBBON
3mil GA
RFOUT
50Ω
TRANSMISSION LINE
Figure 67. High Frequency Output Wideband Matching
HANDLING PRECAUTIONS
To avoid permanent damage, follow these storage, cleanliness,
static sensitivity, transient, and general handling precautions:
Place all bare die in either waffle- or gel-based ESD
protective containers and then seal the die in an ESD
protective bag for shipment. After the sealed ESD
protective bag is opened, store all die in a dry nitrogen
environment.
Handle the chips in a clean environment. Do not attempt
to clean the chips using liquid cleaning systems.
Follow ESD precautions to protect against ESD strikes.
While bias is applied, suppress instrument and bias supply
transients. Use shielded signal and bias cables to minimize
inductive pickup.
Handle the chip along the edges with a vacuum collet or
with a sharp pair of tweezers. The surface of the chip has
fragile air bridges and must not be touched with a vacuum
collet, tweezers, or fingers.
MOUNTING
Before the epoxy die is attached, apply a minimum amount of
epoxy to the mounting surface so that a thin epoxy fillet is
observed around the perimeter of the chip after it is placed into
position. Cure the epoxy per the schedule of the manufacturer.
WIRE BONDING
RF bonds made with 0.076 mm × 0.0127 mm (3 mil × 0. 5 mil)
gold ribbon are recommended for the RF ports. These bonds
must be thermosonically bonded with a force of 40 g to 60 g.
Thermosonically bonded dc bonds of 0.025 mm (1 mil)
diameter are recommended. Create ball bonds with a force of
40 g to 50 g, and wedge bonds with a force of 18 g to 22 g.
Create all bonds with a nominal stage temperature of 150°C.
Apply the minimum amount of ultrasonic energy (depending
on the process and package being used) to achieve reliable
bonds. Keep all bonds as short as possible, less than 0.31 mm
(12.2 mil).
Alternatively, use short RF bonds that are ≤3 mm and made
with two 1 mm wires.



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