PIP3102-R datasheet(7/13 Pages) PHILIPS

7 / 13 page

Philips Semiconductors

Product Specification

Logic level TOPFET

PIP3102-R

Fig.8. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25˚C = f(Tj); ID = 10 A; VIS = 4.4 V

Fig.9. Typical on-state resistance, T

j = 25˚C. RDS(ON)

= f(V

IS); conditions: ID = 10 A; VPS = 4 V; tp = 300 µs

Fig.10. Typical transfer characteristics, T

j = 25˚C.

D = f(VIS); conditions: VPS ≥ 4 V tp = 300 µs

Fig.11. Typical overtemperature protection threshold.

j(TO) = f(VPS); conditions: VIS = 5 V

Fig.12. Typical drain source leakage current.

DSS = f(Tj); conditions: VDS = 40 V; VPS = VIS = 0 V

Fig.13. Typical DC input characteristics, T

j = 25˚C.

IS & IISL = f(VIS); normal operation & protection latched

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

-50

100

150

Normalised R DS(ON) = f(Tj)

Tj /

Tj (TO)

150

160

170

180

190

200

345678

VPS / V

Data below 4V is for

information only. All

spec. values are for

normal operation at

4V and above.

012345678

VIS / V

RDS(ON) / mOhm

typ.

max.

1E-9

10E-9

100E-9

1E-6

10E-6

100E-6

-50

100

150

max.

typ.

IDSS / A

Tj /

012345678

VIS / V

ID / A

VDS = 13V

0.5

1.0

1.5

2.0

2.5

3.0

3.5

01234567

Latched

Unlatched

IIS / mA

VIS / V

October 2002

Rev 1.000

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