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PIP3102-R 数据表(PDF) 10 Page - NXP Semiconductors |
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PIP3102-R 数据表(HTML) 10 Page - NXP Semiconductors |
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10 / 13 page ![]() Philips Semiconductors Product Specification Logic level TOPFET PIP3102-R Fig.26. Clamping energy test circuit, R IS = 100 Ω. Fig.27. Typical non-repetitive clamping energy. E DSM = f(L); conditions: VIS = 0 V Fig.28. Typical clamping characteristic, 25˚C. I D = f(VDS); conditions: VIS = 0 V; tp ≤ 300 µs Fig.29. Test circuit for resistive load switching times. V IS = 5 V Fig.30. Typical switching waveforms, resistive load. R L = 10 Ω; adjust VDD to obtain ID = 1.5 A; Tj = 25˚C Fig.31. Overvoltage clamping characteristic. V DS = f(Tj); conditions: VIS = 0 V; tp ≤ 300 µs L D.U.T. VDD RI = RIS R 01 VDS -ID/100 + - shunt VIS 0 ID 0 VDS 0 VDD V(CL)DSR D S I TOPFET P F P RF VPS + D S I TOPFET P F P VII RI RIS VIS E DSM = 0.5 ⋅ LID 2 ⋅ V (CL)DSR/(V(CL)DSR − VDD) 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 EDSM / J 25 OC 150 OC L / mH 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 VIS & VDS / V Time / µs VIS VDS 0 1 2 3 4 50 60 70 ID / A VDS / V VDSS / V 60 65 -50 0 50 100 150 Tj / OC ID = 4A 10mA October 2002 10 Rev 1.000 |
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