Philips Semiconductors

Product Specification

Logic level TOPFET

PIP3102-R

THERMAL CHARACTERISTIC

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Thermal resistance

R

th j-mb

Junction to mounting base

-

-

1.2

1.39

K/W

OUTPUT CHARACTERISTICS

Limits are for -40˚C

≤ T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Off-state

V

V

(CL)DSS

Drain-source clamping voltage

I

50

-

70

V

I

50

60

70

V

I

DSS

Drain source leakage current

1

V

-

-

100

µA

T

-

0.1

10

µA

On-state

t

R

DS(ON)

Drain-source resistance

I

-

-

50

m

Ω

T

-

21

28

m

Ω

INPUT CHARACTERISTICS

Limits are for -40˚C

≤ T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Normal operation

V

IS(TO)

Input threshold voltage

2

I

0.6

-

2.6

V

T

1.1

1.6

2.1

V

I

IS

Input current

V

-

16

100

µA

V

(CL)IS

Input clamping voltage

I

5.5

6.4

8.5

V

R

IG

Internal series resistance

3

to gate of power MOSFET

-

1.7

-

k

Ω

Overload protection latched

V

I

ISL

Input current

V

1

2.7

4

mA

1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state

quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.

2 The measurement method is simplified if V

Refer to OPEN CIRCUIT LOAD DETECTION

CHARACTERISTICS.

3 This is not a directly measurable parameter.

October 2002

3

Rev 1.000