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LM5035 数据表(PDF) 15 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 LM5035
功能描述  PWM Controller with Integrated Half-Bridge and SyncFET Drivers
PDF  28 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM5035 数据表(HTML) 15 Page - National Semiconductor (TI)

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Feed-Forward Ramp and Volt
Second Clamp (Continued)
tude exceeds the 2.5V threshold of the Volt
Second Clamp
comparator, the on-time is terminated. The C
FF ramp capaci-
tor is discharged by an internal 32
Ω discharge MOSFET
controlled by the V
S Clamp comparator. If the RAMP signal
does not exceed 2.5V before the end of the clock period,
then the internal clock will enable the discharge MOSFET to
reset capacitor C
FF.
By proper selection of R
FF and CFF values, the maximum
on-time of HO and LO can be set to the desired duration.
The on-time set by the Volt
Second Clamp varies inversely
to the line voltage because the RAMP capacitor is charged
by a resistor (R
FF) connected to VIN while the threshold of
the clamp is a fixed voltage (2.5V). An example will illustrate
the use of the Volt
Second Clamp comparator to achieve a
50% duty cycle limit at 200kHz with a 48V line input. A 50%
duty cycle at a 200kHz requires a 2.5µs on-time. To achieve
this maximum on-time clamp level:
The recommended capacitor value range for C
FF is 100pF to
1000pF. 470pF is a standard value that can be paired with an
110k
Ω to approximate the desired 51.4µs time constant. If
load transient response is slowed by the 10% margin, the
R
FF value can be increased. The system signal-to-noise will
be slightly decreased by increasing R
FF xCFF.
Oscillator, Sync Capability
The LM5035 oscillator frequency is set by a single external
resistor connected between the RT and AGND pins. To set a
desired oscillator frequency, the necessary RT resistor is
calculated from:
For example, if the desired oscillator frequency is 400kHz
(HO and LO each switching at 200kHz) a 15k
Ω resistor
would be the nearest standard one percent value.
Each output (HO, LO, SR1 and SR2) switches at half the
oscillator frequency. The voltage at the RT pin is internally
regulated to a nominal 2V. The RT resistor should be located
as close as possible to the IC, and connected directly to the
pins (RT and AGND). The tolerance of the external resistor,
and the frequency tolerance indicated in the Electrical Char-
acteristics, must be taken into account when determining the
worst case frequency range.
The LM5035 can be synchronized to an external clock by
applying a narrow pulse to the RT pin. The external clock
must be at least 10% higher than the free-running oscillator
frequency set by the RT resistor. If the external clock fre-
quency is less than the RT resistor programmed frequency,
the LM5035 will ignore the synchronizing pulses. The syn-
chronization pulse width at the RT pin must be a minimum of
15 ns wide. The clock signal should be coupled into the RT
pin through a 100pF capacitor or a value small enough to
ensure the pulse width at RT is less than 60% of the clock
period under all conditions. When the synchronizing pulse
transitions low-to-high (rising edge), the voltage at the RT pin
must be driven to exceed 3.2V volts from its nominal 2 VDC
level. During the clock signal’s low time, the voltage at the
RT pin will be clamped at 2 VDC by an internal regulator. The
output impedance of the RT regulator is approximately
100
Ω. The RT resistor is always required, whether the oscil-
lator is free running or externally synchronized.
Gate Driver Outputs (HO & LO)
The LM5035 provides two alternating gate driver outputs,
the floating high side gate driver HO and the ground refer-
enced low side driver LO. Each driver is capable of sourcing
1.25A and sinking 2A peak. The HO and LO outputs operate
in an alternating manner, at one-half the internal oscillator
frequency. The LO driver is powered directly by the VCC
regulator. The HO gate driver is powered from a bootstrap
capacitor connected between HB and HS. An external diode
connected between VCC (anode pin) and HB (cathode pin)
provides the high side gate driver power by charging the
bootstrap capacitor from VCC when the switch node (HS
pin) is low. When the high side MOSFET is turned on, HB
rises to a peak voltage equal to V
VCC +VHS where VHS is the
switch node voltage.
The HB and VCC capacitors should be placed close to the
pins of the LM5035 to minimize voltage transients due to
parasitic inductances since the peak current sourced to the
MOSFET gates can exceed 1.25A. The recommended value
of the HB capacitor is 0.01µF or greater. A low ESR / ESL
capacitor, such as a surface mount ceramic, should be used
to prevent voltage droop during the HO transitions.
The maximum duty cycle for each output is limited to slightly
less than 50% due to the internally fixed deadtime. If the
COMP pin is open circuit, the outputs will operate at maxi-
mum duty cycle. The typical deadtime in this condition is
70ns which does not vary with operating frequency. The
maximum duty cycle for each output can be calculated with
the following equation:
where T
S is the period of one complete cycle for both HO
and LO outputs, and T
D is the deadtime. For example, if the
oscillator frequency is 200 kHz, each output will cycle at 100
kHz (T
S = 10µs). Using the nominal deadtime of 70ns, the
maximum duty cycle at this frequency is calculated to be
49.3%.
www.national.com
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