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ADGM1304JCPZ-R2 数据表(PDF) 30 Page - Analog Devices |
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ADGM1304JCPZ-R2 数据表(HTML) 30 Page - Analog Devices |
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30 / 34 page ![]() ADGM1304 Data Sheet Rev. G | Page 30 of 34 CRITICAL OPERATIONAL REQUIREMENTS SYSTEM ERROR CONSIDERATIONS DUE TO ON-RESISTANCE DRIFT The RON performance of the ADGM1304 is affected by device to device variation, channel to channel variation, cycle actuations, settling time post turn on, bias voltage, and temperature changes (see Figure 6 to Figure 12 and Figure 59). In a 50 Ω system, the on-resistance drift over switch actuations (∆RON) can introduce system inaccuracy. Figure 58 shows the ADGM1304 connected with the load in a 50 Ω system, where RS is the source impedance. To calculate the system error caused by the ADGM1304 on-resistance drift, use the following equation: System Error (%) = ΔR/RLOAD where: ΔR is the ADGM1304 on-resistance drift. RLOAD is the load impedance. The ADGM1304 on-resistance drift also affects insertion loss, which must be considered when using the device. To calculate the on-resistance impact on insertion loss, use the following equation: Insertion Loss = 10log(1 + (ΔR/RLOAD)) RS 50Ω ΔR VS RLOAD 50Ω Figure 58. 50 Ω System Representation Where the ADGM1304 Is Connected with the Load Table 8. System Error and Insertion Loss Error Due to ADGM1304 RON Drift On-Resistance Drift System Error (%) Insertion Loss Error (dB) 4.75 9.5 0.39 5 10 0.41 The on-resistance drift over time specification is −0.25 Ω measured after 100 ms, as shown in Figure 8 to Figure 10. According to the plots, the on-resistance drift over time is −0.12 Ω after 100 ms. The on resistance of the ADGM1304 typically drifts by −0.05 Ω per decade. For example, after 100 ms, the on resistance drifts −0.12 Ω. After 1 sec, the on resistance drifts −0.17 Ω, and after 10 sec, it drifts −0.22 Ω. Therefore, after 1000 sec, the on resistance is expected to drift by −0.32 Ω. ON-RESISTANCE SHIFT DUE TO TEMPERATURE SHOCK POST ACTUATIONS When the switch is actuated multiples times at one temperature, and if there is a sudden shift in this temperature, a large shift is shown in the switch RON. Figure 59 shows the absolute RON performance of the population of devices over actuation lifetime. Figure 59 shows how the absolute RON of the device drifts over actuation lifetime. During this measurement, the switch is actuated at 85°C and the switch RON is measured at 25°C. Actuating the switch at 85°C and measuring RON at 25°C is the most severe condition for the ADGM1304 RON drift over actuations. 0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 ASOLUTE RON (Ω) 1 ACTUATION 167 MILLION ACTUATIONS 500 MILLION ACTUATIONS 1 BILLION ACTUATIONS SWITCH ACTUATED AT 85°C RON MEASURED AT 25°C VDD = 3.3V Figure 59. Population vs. Absolute RON, Switch Actuated at 85°C and RON Measured at 25°C HOT SWITCHING Hot switching is caused by cycling the switch on or off with a signal applied to the switch. The presence of the applied signal during switching cycle damages the switch contacts. Hot switching damage is dependent on the current or the voltage levels. Hot switching causes a significant reduction in the cycle lifetime of the switch as shown in Table 1 and Figure 13. Figure 60 shows the hot switching condition when the switch is turned on with a 1 V signal present at the switch terminal during switching. GATE RF1 RFC SWITCH IS OFF 1V GATE RF1 RFC SWITCHING FROM OFF TO ON 1V NOTES 1. THE PRESENCE OF THE APPLIED SIGNAL DURING SWITCHING CYCLE DAMAGES THE SWITCH CONTACTS. DAMAGE AREA SEE NOTE 1. Figure 60. Hot Switching Condition When Turning the Switch from Off to On State |
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