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ADGM1304JCPZ-R2 数据表(PDF) 30 Page - Analog Devices

部件名 ADGM1304JCPZ-R2
功能描述  0 Hz/dc to 14 GHz, Single-Pole, Four-Throw MEMS Switch with Integrated Driver
PDF  34 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADGM1304JCPZ-R2 数据表(HTML) 30 Page - Analog Devices

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ADGM1304
Data Sheet
Rev. G | Page 30 of 34
CRITICAL OPERATIONAL REQUIREMENTS
SYSTEM ERROR CONSIDERATIONS DUE TO
ON-RESISTANCE DRIFT
The RON performance of the ADGM1304 is affected by device
to device variation, channel to channel variation, cycle
actuations, settling time post turn on, bias voltage, and
temperature changes (see Figure 6 to Figure 12 and Figure 59).
In a 50 Ω system, the on-resistance drift over switch actuations
(∆RON) can introduce system inaccuracy. Figure 58 shows the
ADGM1304 connected with the load in a 50 Ω system, where
RS is the source impedance. To calculate the system error
caused by the ADGM1304 on-resistance drift, use the following
equation:
System Error (%) = ΔR/RLOAD
where:
ΔR is the ADGM1304 on-resistance drift.
RLOAD is the load impedance.
The ADGM1304 on-resistance drift also affects insertion loss,
which must be considered when using the device. To calculate
the on-resistance impact on insertion loss, use the following
equation:
Insertion Loss = 10log(1 + (ΔR/RLOAD))
RS
50Ω
ΔR
VS
RLOAD
50Ω
Figure 58. 50 Ω System Representation Where the ADGM1304 Is Connected
with the Load
Table 8. System Error and Insertion Loss Error Due to
ADGM1304 RON Drift
On-Resistance Drift
System
Error (%)
Insertion Loss Error (dB)
4.75
9.5
0.39
5
10
0.41
The on-resistance drift over time specification is −0.25 Ω
measured after 100 ms, as shown in Figure 8 to Figure 10.
According to the plots, the on-resistance drift over time is
−0.12 Ω after 100 ms. The on resistance of the ADGM1304
typically drifts by −0.05 Ω per decade. For example, after
100 ms, the on resistance drifts −0.12 Ω. After 1 sec, the on
resistance drifts −0.17 Ω, and after 10 sec, it drifts −0.22 Ω.
Therefore, after 1000 sec, the on resistance is expected to drift
by −0.32 Ω.
ON-RESISTANCE SHIFT DUE TO TEMPERATURE
SHOCK POST ACTUATIONS
When the switch is actuated multiples times at one temperature,
and if there is a sudden shift in this temperature, a large shift is
shown in the switch RON. Figure 59 shows the absolute RON
performance of the population of devices over actuation
lifetime. Figure 59 shows how the absolute RON of the device
drifts over actuation lifetime. During this measurement, the
switch is actuated at 85°C and the switch RON is measured at
25°C. Actuating the switch at 85°C and measuring RON at 25°C
is the most severe condition for the ADGM1304 RON drift over
actuations.
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
ASOLUTE RON (Ω)
1 ACTUATION
167 MILLION ACTUATIONS
500 MILLION ACTUATIONS
1 BILLION ACTUATIONS
SWITCH ACTUATED AT 85°C
RON MEASURED AT 25°C
VDD = 3.3V
Figure 59. Population vs. Absolute RON, Switch Actuated at 85°C and RON
Measured at 25°C
HOT SWITCHING
Hot switching is caused by cycling the switch on or off with a
signal applied to the switch. The presence of the applied signal
during switching cycle damages the switch contacts. Hot
switching damage is dependent on the current or the voltage
levels. Hot switching causes a significant reduction in the cycle
lifetime of the switch as shown in Table 1 and Figure 13.
Figure 60 shows the hot switching condition when the switch is
turned on with a 1 V signal present at the switch terminal
during switching.
GATE
RF1
RFC
SWITCH IS OFF
1V
GATE
RF1
RFC
SWITCHING FROM OFF TO ON
1V
NOTES
1. THE PRESENCE OF THE APPLIED SIGNAL DURING
SWITCHING CYCLE DAMAGES THE SWITCH CONTACTS.
DAMAGE AREA
SEE NOTE 1.
Figure 60. Hot Switching Condition When Turning the Switch from Off to On State



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