STGP8M120DF3 datasheet(5/15 Pages) STMICROELECTRONICS

部件名	STGP8M120DF3

功能描述	Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 15 page

2.1

Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

IGBT140920161248PDT

150

100

150

P TOT

(W)

T C (°C)

V GE ≥ 15 V,

T J ≤ 175 °C

Figure 2. Collector current vs case temperature

IGBT140920161249CCT

100

150

I C

(A)

T C (°C)

V GE ≤ 15 V,

T J ≥ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

IGBT140920161249OC25

I C

(A)

V CE (V)

V GE = 15 V

13 V

11 V

9 V

7 V

Figure 4. Output characteristics (TJ = 175 °C)

IGBT140920161250OC175

I C

(A)

V CE (V)

V GE = 15 V

13 V

11 V

9 V

7 V

Figure 5. VCE(sat) vs junction temperature

IGBT140920161250VCET

2.5

1.5

-50

100

150

VCE(sat)

TJ (°C)

VGE = 15 V

IC = 16 A

IC = 8 A

IC = 4 A

Figure 6. VCE(sat) vs collector current

IGBT140920161250VCEC

2.5

1.5

VCE(sat)

IC (A)

VGE = 15 V

TJ = 175 °C

TJ = 25 °C

TJ = -40 °C

STGP8M120DF3

Electrical characteristics (curves)

DS11847 - Rev 2

page 5/15

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