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STGP8M120DF3 数据表(PDF) 7 Page - STMicroelectronics

部件名 STGP8M120DF3
功能描述  Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP8M120DF3 数据表(HTML) 7 Page - STMicroelectronics

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Figure 13. Capacitance variations
IGBT140920161253CVR
100
10
1
0.1
1
10
100
1000
C
(pF)
VCE (V)
Cies
Coes
Cres
Figure 14. Gate charge vs gate-emitter voltage
IGBT140920161253GCGE
15
10
5
0
0
10
20
30
VGE
(V)
Qg (nC)
VCC = 960 V,
IC = 8 A,
IG = 1 mA
Figure 15. Switching energy vs collector current
IGBT140920161254SLC
1800
1200
600
0
0
4
8
12
E
(µJ)
IC (A)
VCC = 600 V, RG = 33 Ω,
VGE = 15 V, TJ = 175 °C
Etot
Eoff
Eon
Figure 16. Switching energy vs gate resistance
IGBT140920161255SLG
1600
1200
800
400
0
40
80
120
E
(µJ)
RG (Ω)
VCC = 600 V, IC = 8 A,
VGE = 15 V, TJ = 175 °C
Etot
Eoff
Eon
Figure 17. Switching energy vs temperature
IGBT140920161255SLT
1100
900
700
500
300
0
50
100
150
E
(µJ)
TJ (°C)
VCC = 600 V, IC = 8 A,
RG = 33 Ω, VGE = 15 V
Etot
Eoff
Eon
Figure 18. Switching energy vs collector emitter voltage
IGBT140920161256SLV
2000
1500
1000
500
0
200
400
600
800
E
(µJ)
VCE (V)
IC = 8 A, RG = 33 Ω,
VGE = 15 V, TJ = 175 °C
Etot
Eoff
Eon
STGP8M120DF3
Electrical characteristics (curves)
DS11847 - Rev 2
page 7/15



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