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STGP8M120DF3 数据表(PDF) 9 Page - STMicroelectronics |
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STGP8M120DF3 数据表(HTML) 9 Page - STMicroelectronics |
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9 / 15 page ![]() Figure 25. Reverse recovery energy vs diode current slope IGBT140920161300RRE 500 450 400 350 300 250 250 550 850 1150 Err (µJ) di/dt (A/µs) VCC = 600 V, VGE = 15 V, IF = 8 A, TJ = 175 °C Figure 26. Thermal impedance for IGBT 10 10 10 10 10 tp(s) -5 -4 -3 -2 -1 10 -2 10 -1 K 0.2 0.05 0.02 0.01 0.1 Zth=k Rthj-c δ=tp/t tp t Single pulse δ=0.5 ZthTO2T_B Figure 27. Thermal impedance for diode STGP8M120DF3 Electrical characteristics (curves) DS11847 - Rev 2 page 9/15 |
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