STGP8M120DF3 datasheet(6/15 Pages) STMICROELECTRONICS

部件名	STGP8M120DF3

功能描述	Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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6 / 15 page

Figure 7. Collector current vs switching frequency

IGBT140920161251CCS

10 0

10 1

10 2

(A)

f (kHz)

Rectangular current

shape(duty cycle=0.5

VCC = 600 V,

RG = 33 Ω

VGE = 0/15 V,

TJ = 175 °C)

TC = 80 °C

TC = 100 °C

Figure 8. Forward bias safe operating area

Figure 9. Transfer characteristics

IGBT140920161251TCH

I C

(A)

V GE (V)

V CE = 6 V

T J = 25 °C

T J = 175 °C

Figure 10. Diode VF vs forward current

IGBT140920161252DVF

(V)

IF (A)

TJ = -40 °C

TJ = 25 °C

TJ = 175 °C

Figure 11. Normalized VGE(th) vs junction temperature

IGBT140920161252NVGE

1.1

1.0

0.9

0.8

-50

100

150

VGE(th)

(norm.)

TJ (°C)

VCE = VGE

IC = 500 µA

Figure 12. Normalized V(BR)CES vs junction temperature

IGBT140920161253NVBR

1.06

1.02

0.98

0.94

0.9

-50

100

150

TJ (°C)

IC = 2 mA

V(BR)CES

(norm.)

STGP8M120DF3

Electrical characteristics (curves)

DS11847 - Rev 2

page 6/15

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