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STGP8M120DF3 数据表(PDF) 8 Page - STMicroelectronics

部件名 STGP8M120DF3
功能描述  Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP8M120DF3 数据表(HTML) 8 Page - STMicroelectronics

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Figure 19. Short-circuit time and current vs VGE
IGBT140920161256SCV
40
30
20
10
0
50
40
30
20
10
9
10
11
12
13
14
15
VGE (V)
VCC ≤ 600 A, TJ ≤ 150 °C
tSC
ISC
tsc
(µs)
Isc
(A)
Figure 20. Switching times vs collector current
IGBT140920161257STC
10 2
10 1
10 0
0
4
8
12
t
(ns)
IC (A)
VCC = 600 V, VGE = 15 V,
RG = 33 Ω, TJ = 175 °C
tf
td(off)
td(on)
tr
Figure 21. Switching times vs gate resistance
IGBT140920161258STR
100
10
1
0
40
80
120
t
(ns)
RG (Ω)
VCC = 600 V, VGE = 15 V,
IC = 8 A, TJ = 175 °C
tf
td(off)
td(on)
tr
Figure 22. Reverse recovery current vs diode current
slope
IGBT140920161259RRC
30
25
20
15
10
5
250
550
850
1150
Irrm
(A)
di/dt (A/µs)
VCC = 600 V, VGE = 15 V,
IF = 8 A, TJ = 175 °C
Figure 23. Reverse recovery time vs diode current slope
IGBT140920161259RRT
500
400
300
200
250
550
850
1150
trr
(ns)
di/dt (A/µs)
VCC = 600 V, VGE = 15 V,
IF = 8 A, TJ = 175 °C
Figure 24. Reverse recovery charge vs diode current
slope
IGBT140920161259RRQ
2
1.9
1.8
1.7
250
550
850
1150
Qrr
(µC)
di/dt (A/µs)
VCC = 600 V, VGE = 15 V,
IF = 8 A, TJ = 175 °C
STGP8M120DF3
Electrical characteristics (curves)
DS11847 - Rev 2
page 8/15



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