STGP8M120DF3 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STGP8M120DF3

功能描述	Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 15 page

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown voltage

VGE = 0 V, IC = 2 mA

1200

VCE(sat)

Collector-emitter saturation voltage

VGE = 15 V, IC = 8 A

1.85

2.3

VGE = 15 V, IC = 8 A,

TJ = 125 °C

2.1

VGE = 15 V, IC = 8 A,

TJ = 175 °C

2.2

Forward on-voltage

IF = 8 A

2.4

3.35

IF = 8 A, TJ = 125 °C

1.75

IF = 8 A, TJ = 175 °C

1.55

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 500 µA

ICES

Collector cut-off current

VCE = 1200 V

µA

IGES

Gate-emitter leakage current

VGE = ± 20 V

±250

µA

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0 V

542

Coes

Output capacitance

74.4

Cres

Reverse transfer capacitance

Total gate charge

VCC = 960 V, IC = 8 A,

VGE = 0 to 15 V

(see Figure 29. Gate

charge test circuit)

Qge

Gate-emitter charge

4.5

Qgc

Gate-collector charge

18.5

STGP8M120DF3

Electrical characteristics

DS11847 - Rev 2

page 3/15

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