Figure 5. On-state characteristics (maximum values)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

1

10

100

ITM(A)

VTM(V)

Tj max.

Vto = 0.85 V

Rd = 50 mΩ

Tj = Tj max.

Tj = 25 °C

Figure 6. Surge peak on-state current versus number of

cycles

0

10

20

30

40

50

60

70

80

90

1

10

100

1000

Number of cycles

I

TSM(A)

Non repetitive

Tj initial = 25 °C

Repetitive

TC = 110 °C

One cycle

t = 16.66 ms

Figure 7. Non repetitive surge peak on-state current for a

sinusoidal pulse (tp < 10 ms)

0.01

0.10

1.00

10.00

10

100

1000

t (ms)

p

T initial=25°C

j

ITSM

dI/dt limitation:

50A/µs

360°

α

ITSM(A)

Figure 8. Relative variation of gate trigger current

-40

-20

0

20

40

60

80

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25 °C]

Tj (°C)

IH and IL

IGT

Holding current and latching current versus junction temperature (typical values)

Figure 9. Relative variation of critical rate of decrease of

main current versus (dV/dt)c (typical values)

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

(dl/dt)c [(dV/dt)c / specified (dl/dt)c

(dV/dt)c (V/µs)

T810/SW

TW

T835/T850/CW/SW/BW

Snubberless and logic level types

Figure 10. Relative variation of critical rate of decrease of

main current versus (dV/dt)c (typical values)

0.1

1.0

10.0

100.0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

(dl/dt)c [(dV/dt)c] / specified (dl/dt)c

(dV/dt)c (V/µs)

C

Standard types

B

BTA08, BTB08, T810, T835, T850

Characteristics (curves)

DS2114 - Rev 15

page 5/21