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T810 数据表(PDF) 4 Page - STMicroelectronics |
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T810 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 21 page ![]() 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current (full cycle) 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 P(W) IT(RMS)(A) Figure 2. RMS on-state current versus temperature (full cycle) 0 25 50 75 100 125 0 1 2 3 4 5 6 7 8 9 10 IT(RMS)(A) Tc(°C) BTB/T8 BTA Figure 3. RMS on-state current versus ambient temperature (full cycle) 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT(RMS)(A) Tc(°C) Printed circuit board FR4, copper thickness: 35 µm D²PAK (S = 1 cm²) DPAK (S = 0.5 cm²) Figure 4. Relative variation of thermal impedance versus pulse duration 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-3 1E-2 1E-1 1E+0 K = [Zth/Rth] tp(s) Zth(j-c) DPAK/IPAK Zth(j-a) TO-220AB/D²PAK Zth(j-a) BTA08, BTB08, T810, T835, T850 Characteristics (curves) DS2114 - Rev 15 page 4/21 |
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