1

Characteristics

Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)

Symbol

Parameter

Value

Unit

IT(RMS) RMS on-state current (full sine wave)

IPAK, DPAK,TO-220AB, D²PAK Tc = 110 °C

8

A

TO-220AB Ins.

Tc = 100 °C

ITSM

Non repetitive surge peak on-state current (full

cycle, Tj initial = 25 °C)

f = 50 Hz

t = 20 ms

80

A

f = 60 Hz

tp = 16.7 ms

84

I2t

I2t value for fusing

tp = 10 ms

36

A2s

dl/dt

Critical rate of rise of on-state current IG = 2 x

IGT, tr ≤ 100 ns

f = 120 Hz

Tj = 125 °C

50

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

4

A

PG(AV) Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Snubberless and logic level (3

quadrants)

Symbol

Parameter

Quadrant

T8

BTA08/BTB08

Unit

10

35

50

TW

SW

CW

BW

IGT (1)

VD = 12 V, RL = 30 Ω

I - II - III

Max.

10

35

50

5

10

35

50

mA

VGT

I - II - III

Max.

1.2

V

VGD

VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C

I - II - III

Min.

0.2

V

IH (2)

IT = 100 mA

I - II - III

Max.

15

35

75

10

15

35

50

mA

IL

IG = 1.2 x IGT

I - III

Max.

25

50

70

10

25

50

70

mA

II

Max.

30

60

110

15

30

60

80

dV/dt (2)

VD = 67% VDRM, gate open, Tj = 125 °C

Max.

40

400 1000

20

40

400 1000

V/µs

(dl/dt)c (2)

(dV/dt)c = 0.1 V/µs, Tj = 125 °C

Min.

5.4

3.5

5.4

A/ms

(dV/dt)c = 10 V/µs, Tj = 125 °C

Min.

2.8

1.5

2.98

Without snubber, Tj = 125 °C

Min.

4.5

7

4.5

7

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

BTA08, BTB08, T810, T835, T850

Characteristics

DS2114 - Rev 15

page 2/21