T810 datasheet(3/21 Pages) STMICROELECTRONICS

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Table 3. Standard (4 quadrants)

Symbol

Parameter

Quadrant

BTA08/BTB08

Unit

IGT (1)

VD = 12 V, RL = 33 Ω

I - II - III

Max.

100

VGT

All

Max.

1.3

VGD

VD = VDRM, RL = 33 kΩ, Tj = 125 °C

All

Min.

0.2

IH (2)

IT = 500 mA

I - II - III

Max.

IG = 1.2 IGT

I - III - IV

Max.

100

dV/dt (2)

VD = 67 % VDRM gate open, Tj = 125 °C

Min.

200

400

V/µs

(dV/dt)c (2)

(dI/dt)c = 3.5 A/ms, Tj = 125 °C

Min.

V/µs

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

Table 4. Static electrical characteristics

Symbol

Test conditions

Value

Unit

VTM (1)

ITM = 11 A, tp = 380 µs

Tj = 25 °C

Max.

1.55

VTO (1)

threshold on-state voltage

Tj = 125 °C

Max.

0.85

RD (1)

Dynamic resistance

Tj = 125 °C

Max.

mΩ

IDRM IRRM

VDRM = VRRM

Tj = 25 °C

Max.

µA

Tj = 125 °C

Max.

1. For both polarities of A2 referenced to A1

Table 5. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Max. junction to case thermal resistance (AC)

IPAK / D2PAK / DPAK / TO-220AB

1.6

°C/W

TO-220AB Insulated

2.5

Rth(j-a)

Junction to ambient (typ.)

S = 2 cm² (1)

D²PAK

°C/W

S = 1 cm²(1)

DPAK

Junction to ambient (typ.)

TO-220AB / TO-220AB Insulated

IPAK

100

1. S = Copper surface under tab.

BTA08, BTB08, T810, T835, T850

Characteristics

DS2114 - Rev 15

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