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M24C02-R 数据表(PDF) 19 Page - STMicroelectronics |
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M24C02-R 数据表(HTML) 19 Page - STMicroelectronics |
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19 / 41 page ![]() Table 9. Input parameters Symbol Parameter(1) Test condition Min. Max. Unit CIN Input capacitance (SDA) - - 8 pF CIN Input capacitance (other pins) - - 6 pF ZL Input impedance (Ei, WC) VIN < 0.3 VCC 15 70 kΩ ZH VIN > 0.7 VCC 500 - kΩ 1. Evaluated by characterization – Not tested in production. Table 10. Cycling performance Symbol Parameter Test condition Max. Unit Ncycle Write cycle endurance(1) TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000 Write cycle TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000 1. A write cycle is executed when either a page write or a byte write instruction is decoded. Table 11. Memory cell data retention Parameter Test condition Min. Unit Data retention(1) TA = 55 °C 200 Year 1. The data retention behaviour is checked in production, while the 200-year limit is defined from characterization and qualification results. M24C01/02-W M24C01/02-R M24C02-F DC and AC parameters DS9398 - Rev 7 page 19/41 |
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