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M24C02-R 数据表(PDF) 21 Page - STMicroelectronics |
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M24C02-R 数据表(HTML) 21 Page - STMicroelectronics |
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21 / 41 page ![]() Table 13. DC characteristics (M24C01/02-R) Symbol Parameter Test conditions(1) (in addition to those in Table 6 and Table 8) Min. Max. Unit ILI Input leakage current ( Ei, SCL, SDA) VIN = VSS or VCC, device in standby mode - ± 2 µA ILO Output leakage current SDA in Hi-Z, external voltage applied on SDA: VSS or VCC - ± 2 µA ICC Supply current (Read) VCC = 1.8 V, fc= 400 kHz - 0.8 mA ICC0(2) Supply current (Write) During tW 1.8 V ≤ VCC ≤ 2.5 V - 0.5 mA ICC1 Standby supply current Device not selected,(3) VIN = VSS or VCC, VCC = 1.8 V - 1 µA VIL Input low voltage (SCL, SDA, WC) 2.5 V ≤ VCC -0.45 0.3 VCC V VCC < 2.5 V -0.45 0.25 VCC VIH Input high voltage (SCL, SDA) VCC < 2.5 V 0.75 VCC 6.5 V Input high voltage (WC) VCC < 2.5 V 0.75 VCC VCC+0.6 V VOL Output low voltage IOL = 0.7 mA, VCC = 1.8 V - 0.2 V 1. If the application uses the voltage range R device with 2.5 V ≤ Vcc ≤ 5.5 V and -40 °C < TA < +85 °C, refer to Table 12 instead of this table. 2. Evaluated by characterization - Not tested in production. 3. The device is not selected after power-up, after a read instruction (after the stop condition), or after the completion of the internal write cycle tW (tW is triggered by the correct decoding of a write instruction). M24C01/02-W M24C01/02-R M24C02-F DC and AC parameters DS9398 - Rev 7 page 21/41 |
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