Table 13. Cycling performance by groups of four bytes

Symbol

Parameter

Test condition

Min.

Max.

Unit

Ncycle

Write cycle endurance(1)

TA ≤ 25 °C, VCC(min) < VCC < VCC(max)

-

4,000,000

Write cycle(2)

TA = 85 °C, VCC(min) < VCC < VCC(max)

-

1,200,000

1. The Write cycle endurance is defined for groups of four data bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3], where

N is an integer. The Write cycle endurance is defined by characterization and qualification.

2. A Write cycle is executed when either a Page write, a Byte write, a WRSR, a WRID or an LID instruction is decoded. When

using the Byte write, the Page write or the WRID instruction, refer also to Section 6.6.1 Cycling with error correction code

(ECC x4).

Table 14. Memory cell data retention

Parameter

Test condition

Min.

Unit

Data retention(1)

TA = 55 °C

200

Year

1. The data retention behaviour is checked in production, while the 200-year limit is defined from characterization and

qualification results.

Table 15. Capacitance

Symbol

Parameter

Test condition(1)

Min.

Max.

Unit

COUT

Output capacitance (Q)

VOUT = 0 V

-

8

pF

CIN

Input capacitance (D)

VIN = 0 V

-

8

pF

Input capacitance (other pins)

VIN = 0 V

-

6

pF

1. Sampled only, not 100% tested, at TA = 25 °C and a frequency of 5 MHz

M95128-W M95128-R M95128-DF

DC and AC parameters

DS1356 - Rev 20

page 26/48