M58BW16F datasheet(46/81 Pages) STMICROELECTRONICS

46 / 81 page

DC and AC parameters

M58BW16F, M58BW32F

46/81

The Standby mode can be disabled by setting the Standby Disable bit (M14) of the Burst Configuration

IDDP-UP is defined only during the power-up phase, from the moment current is applied with RP Low to the

moment when the supply voltage has become stable and RP is brought to High.

Table 16.

Device capacitance(1)(2)

TA = 25°C, f = 1 MHz

Sampled only, not 100% tested.

Symbol

Parameter

Test Condition

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0V

COUT

Output Capacitance

VOUT = 0V

Table 17.

DC characteristics

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI

Input Leakage Current

≤V

IN ≤VDDQ

±1

µA

ILO

Output Leakage Current

0V≤VOUT ≤VDDQ

±5

µA

IDD

(1)

Supply Current (Random

Read)

E = VIL, G = VIH,

fadd = 6MHz

IDDP-UP

(2)

Supply Current (Power-up)

IDDB

(1)

Supply Current (Burst

Read)

E = VIL, G = VIH,

fclock = 75MHz

IDD1

(1)

Supply Current (Standby)

E = RP = VDD ±

0.2V

150

µA

IDD2

(1)

Supply Current (Program

or Erase)

Program, Erase in

progress

IDD3

(1)

Supply Current

(Erase/Program Suspend)

E = VIH

150

µA

IDD4

(1)

Supply Current (Standby

Disable)

510

VIL

Input Low Voltage

–0.5

0.2VDDQIN

VIH

Input High Voltage (for DQ

lines)

0.8VDDQIN

VDDQ +0.3

VIH

Input High Voltage (for

Input only lines)

0.8VDDQIN

3.6

VOL

Output Low Voltage

IOL = 100µA

0.1

VOH

Output High Voltage

CMOS

IOH = –100µA

VDDQ –0.1

VLKO

VDD Supply Voltage (Erase

and Program lockout)

2.2

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