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STGD4H60DF 数据表(PDF) 5 Page - STMicroelectronics

部件名 STGD4H60DF
功能描述  Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD4H60DF 数据表(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
GADG170120220955PDT
75
50
25
0
25
75
125
175
PTOT
(W)
TC (°C)
VGE ≥ 15 V, TJ ≤ 175 °C
Figure 2. Collector current vs case temperature
GADG170120220956CCT
8
6
4
2
0
25
75
125
175
IC
(A)
TC (°C)
VGE ≥ 15 V, TJ ≤ 175 °C
Figure 3. Output characteristics (TJ = 25°C)
GADG170120220957OC25
12
8
4
0
0
1
2
3
IC
(A)
VCE (V)
VGE=7 V
VGE=9 V
VGE=11 V
VGE=15 V
VGE=13 V
Figure 4. Output characteristics (TJ = 175°C)
GADG170120220957OC175
12
8
4
0
0
1
2
3
4
IC
(A)
VCE (V)
VGE=7 V
VGE=9 V
VGE=11 V
VGE=15 V
VGE=13 V
Figure 5. VCE(sat) vs junction temperature
GADG170120220958VCET
1.9
1.5
1.1
-50
0
50
100
150
VCE(sat)
(V)
TJ (°C)
IC=1.5 A
IC=3 A
IC=6 A
VGE=15 V
Figure 6. VCE(sat) vs collector current
GADG170120220958VCEC
3.0
2.6
2.2
1.8
1.4
1.0
0
4
8
12
VCE(sat)
(V)
IC (A)
TJ= -40 °C
TJ= 175 °C
TJ= 25 °C
STGD4H60DF
Electrical characteristics (curves)
DS13901 - Rev 2
page 5/18



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