Figure 19. Switching times vs gate resistance

GADG180120220844STR

RG (Ω)

td(off)

102

101

0

100

200

300

t

(ns)

VGE = 15 V, TJ= 175

℃

IC = 3 A

td(on)

tr

tf

Figure 20. Reverse recovery current vs diode current

slope

GADG170120221018RRC

7

5

3

1

0

200

400

600

800

Irrm

(A)

di/dt (A/µs)

IF = 3 A,

Figure 21. Reverse recovery time vs diode current slope

GADG170120221017RRT

125

100

75

50

0

200

400

600

800

trr

(ns)

di/dt (A/µs)

IF = 3 A,

Figure 22. Reverse recovery charge vs diode current

slope

GADG170120221019RRQ

230

220

210

200

190

180

0

200

400

600

800

Qrr

(µC)

di/dt (A/µs)

IF = 3 A,

Figure 23. Reverse recovery energy vs diode current slope

GADG170120221020RRE

45

42

39

36

33

30

0

200

400

600

800

Err

(μJ)

di/dt (A/µs)

IF = 3 A,

STGD4H60DF

Electrical characteristics (curves)

DS13901 - Rev 2

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